The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

Guangchen Zhang; Zhinong Yu; Junchen Dong; Qi Li; Yi Wang; Dedong Han

doi:10.1002/sdtp.16036

The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

Guangchen Zhang, Zhinong Yu, Junchen Dong, Qi Li, Yi Wang, Dedong Han

光电学院

科研成果: 期刊稿件 › 会议文章 › 同行评审

摘要

The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm²V^-1s^-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 10⁹. This work drives the application of ITO TFTs in the field of electronics devices.

源语言	英语
页（从-至）	600-602
页数	3
期刊	Digest of Technical Papers - SID International Symposium
卷	53
期	S1
DOI	https://doi.org/10.1002/sdtp.16036
出版状态	已出版 - 2022
活动	International Conference on Display Technology, ICDT 2022 - Fuzhou, 中国期限: 9 7月 2022 → 12 7月 2022

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10.1002/sdtp.16036

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Zhang, G., Yu, Z., Dong, J., Li, Q., Wang, Y., & Han, D. (2022). The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs. Digest of Technical Papers - SID International Symposium, 53(S1), 600-602. https://doi.org/10.1002/sdtp.16036

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title = "The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs",

abstract = "The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.",

keywords = "Indium-Tin-Oxide, annealing atmosphere, electrical properties, thin-film transistors",

author = "Guangchen Zhang and Zhinong Yu and Junchen Dong and Qi Li and Yi Wang and Dedong Han",

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T1 - The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

AU - Zhang, Guangchen

AU - Yu, Zhinong

AU - Dong, Junchen

AU - Li, Qi

AU - Wang, Yi

AU - Han, Dedong

PY - 2022

Y1 - 2022

N2 - The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.

AB - The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.

KW - Indium-Tin-Oxide

KW - annealing atmosphere

KW - electrical properties

KW - thin-film transistors

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U2 - 10.1002/sdtp.16036

DO - 10.1002/sdtp.16036

M3 - Conference article

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SN - 0097-966X

VL - 53

SP - 600

EP - 602

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - S1

T2 - International Conference on Display Technology, ICDT 2022

Y2 - 9 July 2022 through 12 July 2022

ER -

The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

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