The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

Guangchen Zhang; Zhinong Yu; Junchen Dong; Qi Li; Yi Wang; Dedong Han

doi:10.1002/sdtp.16036

The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

Guangchen Zhang, Zhinong Yu, Junchen Dong, Qi Li, Yi Wang, Dedong Han

School of Optics and Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm²V^-1s^-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 10⁹. This work drives the application of ITO TFTs in the field of electronics devices.

Original language	English
Pages (from-to)	600-602
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	53
Issue number	S1
DOIs	https://doi.org/10.1002/sdtp.16036
Publication status	Published - 2022
Event	International Conference on Display Technology, ICDT 2022 - Fuzhou, China Duration: 9 Jul 2022 → 12 Jul 2022

Keywords

Indium-Tin-Oxide
annealing atmosphere
electrical properties
thin-film transistors

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10.1002/sdtp.16036

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title = "The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs",

abstract = "The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.",

keywords = "Indium-Tin-Oxide, annealing atmosphere, electrical properties, thin-film transistors",

author = "Guangchen Zhang and Zhinong Yu and Junchen Dong and Qi Li and Yi Wang and Dedong Han",

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TY - JOUR

T1 - The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

AU - Zhang, Guangchen

AU - Yu, Zhinong

AU - Dong, Junchen

AU - Li, Qi

AU - Wang, Yi

AU - Han, Dedong

PY - 2022

Y1 - 2022

N2 - The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.

AB - The effects of annealing atmosphere (Vacuum, Air, N2, and O2) on performance of dual high-k gate dielectrics ITO TFTs are studied. The ITO TFTs annealed in N2 show excellent electrical properties, including a saturation mobility of 18.0 cm2V-1s-1, a subthreshold swing of 215.4 mV/decade, and an on-to-off state current ratio of 1.79 × 109. This work drives the application of ITO TFTs in the field of electronics devices.

KW - Indium-Tin-Oxide

KW - annealing atmosphere

KW - electrical properties

KW - thin-film transistors

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U2 - 10.1002/sdtp.16036

DO - 10.1002/sdtp.16036

M3 - Conference article

AN - SCOPUS:85141897292

SN - 0097-966X

VL - 53

SP - 600

EP - 602

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - S1

T2 - International Conference on Display Technology, ICDT 2022

Y2 - 9 July 2022 through 12 July 2022

ER -

The Effects of Annealing Atmosphere on Dual Gate Dielectric ITO TFTs

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Keywords

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