摘要
The ZnO:Al films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Ω·cm was obtained in the condition of vacuum annealing at 220 °C.
| 源语言 | 英语 |
|---|---|
| 主期刊名 | 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE |
| 页 | 552-554 |
| 页数 | 3 |
| DOI | |
| 出版状态 | 已出版 - 2007 |
| 活动 | 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE - Shanghai, 中国 期限: 17 10月 2007 → 19 10月 2007 |
出版系列
| 姓名 | 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE |
|---|
会议
| 会议 | 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE |
|---|---|
| 国家/地区 | 中国 |
| 市 | Shanghai |
| 时期 | 17/10/07 → 19/10/07 |
指纹
探究 'The annealing process of R.F. magnetron sputtered ZnO:Al films' 的科研主题。它们共同构成独一无二的指纹。引用此
Yu, Z., Xu, J., Xue, W., & Li, J. (2007). The annealing process of R.F. magnetron sputtered ZnO:Al films. 在 2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE (页码 552-554). 文章 4410872 (2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE). https://doi.org/10.1109/AOE.2007.4410872