The annealing process of R.F. magnetron sputtered ZnO:Al films

Zhinong Yu*, Jin Xu, Wei Xue, Jinwei Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The ZnO:Al films were annealed at different atmosphere. The films annealed in vacuum showed perfect properties, compared with in air and Ar atmosphere, and the low resistivity of the order of 10-3 Ω·cm was obtained in the condition of vacuum annealing at 220 °C.

Original languageEnglish
Title of host publication2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE
Pages552-554
Number of pages3
DOIs
Publication statusPublished - 2007
Event2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE - Shanghai, China
Duration: 17 Oct 200719 Oct 2007

Publication series

Name2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE

Conference

Conference2007 Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, AOE
Country/TerritoryChina
CityShanghai
Period17/10/0719/10/07

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