Temperature-dependent transport and hysteretic behaviors induced by interfacial states in MoS₂field-effect transistors with lead-zirconate-titanate ferroelectric gating

We report the temperature and gate-voltage-dependent electrical properties of lead-zirconate-titanate-gated MoS₂ field-effect transistors (MoS₂-PZT FETs) within a temperature range of 300 to 380 K. The MoS₂ transistors with PZT gating exhibit large reproducible clockwise hysteresis, which is induced by the dynamic charge-trapping/de-trapping process of interfacial states between PZT films and MoS₂ channels under the modulation of ferroelectric polarization of PZT films. In this way, the modulation of the gate effect on the hysteresis behavior has been achieved by activating the dynamic charge-trapping/de-trapping process in the interfacial states under different V_gs. Moreover, the temperature dependence of the current in the range of 300 to 380 K indicates thermally activated hysteretic behaviors. The hysteresis in the transfer characteristics of MoS₂-PZT FETs shows a simultaneous enlargement with increasing temperature, which can be attributed to the thermally sensitive dynamic trapping/de-trapping process of interfacial states.