Strong enhancement of ultra-violet emission by CE doping of ZnO sputtered films

C. L. Heng; T. Wang; H. Li; J. J. Liu; J. W. Zhu; A. Ablimit; W. Y. Su; H. C. Wu; P. G. Yin; T. G. Finstad

doi:10.1016/j.matlet.2015.09.125

Strong enhancement of ultra-violet emission by CE doping of ZnO sputtered films

C. L. Heng, T. Wang, H. Li, J. J. Liu, J. W. Zhu, A. Ablimit, W. Y. Su, H. C. Wu, P. G. Yin, T. G. Finstad^*

^*此作品的通讯作者

物理学院

科研成果: 期刊稿件 › 文章 › 同行评审

13 引用（Scopus）

摘要

We report that ultra-violet (UV) emission of ZnO can be made much more intense by incorporating Ce in the ZnO films. After annealing at 1100 °C in N₂ gas, the UV peak (≈3.34 eV, width 133 meV) - intensity for the film doped with Ce is two order of magnitude stronger than that of un-doped ZnO films. The large enhancement is correlated with improved crystallinity and appears due to fewer non-radiative recombination pathways. The improved crystallinity can be related to Ce affecting the self-texturing of ZnO during sputter deposition and annealing.

源语言	英语
页（从-至）	53-55
页数	3
期刊	Materials Letters
卷	162
DOI	https://doi.org/10.1016/j.matlet.2015.09.125
出版状态	已出版 - 1 1月 2016

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10.1016/j.matlet.2015.09.125

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title = "Strong enhancement of ultra-violet emission by CE doping of ZnO sputtered films",

abstract = "We report that ultra-violet (UV) emission of ZnO can be made much more intense by incorporating Ce in the ZnO films. After annealing at 1100 °C in N2 gas, the UV peak (≈3.34 eV, width 133 meV) - intensity for the film doped with Ce is two order of magnitude stronger than that of un-doped ZnO films. The large enhancement is correlated with improved crystallinity and appears due to fewer non-radiative recombination pathways. The improved crystallinity can be related to Ce affecting the self-texturing of ZnO during sputter deposition and annealing.",

keywords = "Ce, Texture, Thin film, UV Luminescence, ZnO",

author = "Heng, {C. L.} and T. Wang and H. Li and Liu, {J. J.} and Zhu, {J. W.} and A. Ablimit and Su, {W. Y.} and Wu, {H. C.} and Yin, {P. G.} and Finstad, {T. G.}",

year = "2016",

month = jan,

day = "1",

doi = "10.1016/j.matlet.2015.09.125",

language = "English",

volume = "162",

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journal = "Materials Letters",

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TY - JOUR

T1 - Strong enhancement of ultra-violet emission by CE doping of ZnO sputtered films

AU - Heng, C. L.

AU - Wang, T.

AU - Li, H.

AU - Liu, J. J.

AU - Zhu, J. W.

AU - Ablimit, A.

AU - Su, W. Y.

AU - Wu, H. C.

AU - Yin, P. G.

AU - Finstad, T. G.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We report that ultra-violet (UV) emission of ZnO can be made much more intense by incorporating Ce in the ZnO films. After annealing at 1100 °C in N2 gas, the UV peak (≈3.34 eV, width 133 meV) - intensity for the film doped with Ce is two order of magnitude stronger than that of un-doped ZnO films. The large enhancement is correlated with improved crystallinity and appears due to fewer non-radiative recombination pathways. The improved crystallinity can be related to Ce affecting the self-texturing of ZnO during sputter deposition and annealing.

AB - We report that ultra-violet (UV) emission of ZnO can be made much more intense by incorporating Ce in the ZnO films. After annealing at 1100 °C in N2 gas, the UV peak (≈3.34 eV, width 133 meV) - intensity for the film doped with Ce is two order of magnitude stronger than that of un-doped ZnO films. The large enhancement is correlated with improved crystallinity and appears due to fewer non-radiative recombination pathways. The improved crystallinity can be related to Ce affecting the self-texturing of ZnO during sputter deposition and annealing.

KW - Ce

KW - Texture

KW - Thin film

KW - UV Luminescence

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84943410553&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2015.09.125

DO - 10.1016/j.matlet.2015.09.125

M3 - Article

AN - SCOPUS:84943410553

SN - 0167-577X

VL - 162

SP - 53

EP - 55

JO - Materials Letters

JF - Materials Letters

ER -

Strong enhancement of ultra-violet emission by CE doping of ZnO sputtered films

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