Second-order control volume finite element method for self-heating effects simulation of semiconductor devices

Da Miao Yu, Xiao Min Pan*, Xin Qing Sheng

*此作品的通讯作者

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

A higher-order control volume finite element method for triangular elements is proposed to simulate the self-heating effects of semiconductor devices. In the scheme, the currents of carrier continuity equations are expressed by the second-order accurate fluxes on the triangle edges incorporating second-order vector basis functions. Although the developed scheme is not monotone in theory, the numerical results reveal that the higher-order discretization approach is exceptionally robust and accurate, and the usage of coarser mesh is allowed compared with the first order method.

源语言英语
主期刊名Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020
出版商Institute of Electrical and Electronics Engineers Inc.
29-30
页数2
ISBN(电子版)9781728168234
DOI
出版状态已出版 - 8月 2020
活动6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020 - Singapore, 新加坡
期限: 24 8月 202026 8月 2020

出版系列

姓名Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020

会议

会议6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020
国家/地区新加坡
Singapore
时期24/08/2026/08/20

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