Second-order control volume finite element method for self-heating effects simulation of semiconductor devices

Da Miao Yu; Xiao Min Pan; Xin Qing Sheng

doi:10.1109/ICCEM47450.2020.9219392

Second-order control volume finite element method for self-heating effects simulation of semiconductor devices

Da Miao Yu, Xiao Min Pan^*, Xin Qing Sheng

^*此作品的通讯作者

Beijing Institute of Technology

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

A higher-order control volume finite element method for triangular elements is proposed to simulate the self-heating effects of semiconductor devices. In the scheme, the currents of carrier continuity equations are expressed by the second-order accurate fluxes on the triangle edges incorporating second-order vector basis functions. Although the developed scheme is not monotone in theory, the numerical results reveal that the higher-order discretization approach is exceptionally robust and accurate, and the usage of coarser mesh is allowed compared with the first order method.

源语言	英语
主期刊名	Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020
出版商	Institute of Electrical and Electronics Engineers Inc.
页	29-30
页数	2
ISBN（电子版）	9781728168234
DOI	https://doi.org/10.1109/ICCEM47450.2020.9219392
出版状态	已出版 - 8月 2020
活动	6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020 - Singapore, 新加坡期限: 24 8月 2020 → 26 8月 2020

出版系列

姓名	Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020

会议

会议	6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020
国家/地区	新加坡
市	Singapore
时期	24/08/20 → 26/08/20

访问文件

10.1109/ICCEM47450.2020.9219392

其它文件与链接

链接到 Scopus 的出版物

引用此

Yu, D. M., Pan, X. M., & Sheng, X. Q. (2020). Second-order control volume finite element method for self-heating effects simulation of semiconductor devices. 在 Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020 (页码 29-30). 文章 9219392 (Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCEM47450.2020.9219392

Yu, Da Miao ; Pan, Xiao Min ; Sheng, Xin Qing. / Second-order control volume finite element method for self-heating effects simulation of semiconductor devices. Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 页码 29-30 (Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020).

@inproceedings{8a25e8a6f871499fbc09e4be7c223bee,

title = "Second-order control volume finite element method for self-heating effects simulation of semiconductor devices",

abstract = "A higher-order control volume finite element method for triangular elements is proposed to simulate the self-heating effects of semiconductor devices. In the scheme, the currents of carrier continuity equations are expressed by the second-order accurate fluxes on the triangle edges incorporating second-order vector basis functions. Although the developed scheme is not monotone in theory, the numerical results reveal that the higher-order discretization approach is exceptionally robust and accurate, and the usage of coarser mesh is allowed compared with the first order method.",

keywords = "CVFEM-MS, Self-heating effects, Semiconductor devices",

author = "Yu, {Da Miao} and Pan, {Xiao Min} and Sheng, {Xin Qing}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020 ; Conference date: 24-08-2020 Through 26-08-2020",

year = "2020",

month = aug,

doi = "10.1109/ICCEM47450.2020.9219392",

language = "English",

series = "Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "29--30",

booktitle = "Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020",

address = "United States",

}

Yu, DM, Pan, XM & Sheng, XQ 2020, Second-order control volume finite element method for self-heating effects simulation of semiconductor devices. 在 Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020., 9219392, Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020, Institute of Electrical and Electronics Engineers Inc., 页码 29-30, 6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020, Singapore, 新加坡, 24/08/20. https://doi.org/10.1109/ICCEM47450.2020.9219392

Second-order control volume finite element method for self-heating effects simulation of semiconductor devices. / Yu, Da Miao; Pan, Xiao Min; Sheng, Xin Qing.
Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. 页码 29-30 9219392 (Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Second-order control volume finite element method for self-heating effects simulation of semiconductor devices

AU - Yu, Da Miao

AU - Pan, Xiao Min

AU - Sheng, Xin Qing

PY - 2020/8

Y1 - 2020/8

N2 - A higher-order control volume finite element method for triangular elements is proposed to simulate the self-heating effects of semiconductor devices. In the scheme, the currents of carrier continuity equations are expressed by the second-order accurate fluxes on the triangle edges incorporating second-order vector basis functions. Although the developed scheme is not monotone in theory, the numerical results reveal that the higher-order discretization approach is exceptionally robust and accurate, and the usage of coarser mesh is allowed compared with the first order method.

AB - A higher-order control volume finite element method for triangular elements is proposed to simulate the self-heating effects of semiconductor devices. In the scheme, the currents of carrier continuity equations are expressed by the second-order accurate fluxes on the triangle edges incorporating second-order vector basis functions. Although the developed scheme is not monotone in theory, the numerical results reveal that the higher-order discretization approach is exceptionally robust and accurate, and the usage of coarser mesh is allowed compared with the first order method.

KW - CVFEM-MS

KW - Self-heating effects

KW - Semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=85095586983&partnerID=8YFLogxK

U2 - 10.1109/ICCEM47450.2020.9219392

DO - 10.1109/ICCEM47450.2020.9219392

M3 - Conference contribution

AN - SCOPUS:85095586983

T3 - Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020

SP - 29

EP - 30

BT - Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020

Y2 - 24 August 2020 through 26 August 2020

ER -

Yu DM, Pan XM, Sheng XQ. Second-order control volume finite element method for self-heating effects simulation of semiconductor devices. 在 Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. 页码 29-30. 9219392. (Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020). doi: 10.1109/ICCEM47450.2020.9219392

Second-order control volume finite element method for self-heating effects simulation of semiconductor devices

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