Second-order control volume finite element method for self-heating effects simulation of semiconductor devices

Da Miao Yu; Xiao Min Pan; Xin Qing Sheng

doi:10.1109/ICCEM47450.2020.9219392

Second-order control volume finite element method for self-heating effects simulation of semiconductor devices

Da Miao Yu, Xiao Min Pan^*, Xin Qing Sheng

^*Corresponding author for this work

Beijing Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A higher-order control volume finite element method for triangular elements is proposed to simulate the self-heating effects of semiconductor devices. In the scheme, the currents of carrier continuity equations are expressed by the second-order accurate fluxes on the triangle edges incorporating second-order vector basis functions. Although the developed scheme is not monotone in theory, the numerical results reveal that the higher-order discretization approach is exceptionally robust and accurate, and the usage of coarser mesh is allowed compared with the first order method.

Original language	English
Title of host publication	Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	29-30
Number of pages	2
ISBN (Electronic)	9781728168234
DOIs	https://doi.org/10.1109/ICCEM47450.2020.9219392
Publication status	Published - Aug 2020
Event	6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020 - Singapore, Singapore Duration: 24 Aug 2020 → 26 Aug 2020

Publication series

Name	Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020

Conference

Conference	6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020
Country/Territory	Singapore
City	Singapore
Period	24/08/20 → 26/08/20

Keywords

CVFEM-MS
Self-heating effects
Semiconductor devices

Access to Document

10.1109/ICCEM47450.2020.9219392

Cite this

Yu, D. M., Pan, X. M., & Sheng, X. Q. (2020). Second-order control volume finite element method for self-heating effects simulation of semiconductor devices. In Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020 (pp. 29-30). Article 9219392 (Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCEM47450.2020.9219392

Yu, Da Miao ; Pan, Xiao Min ; Sheng, Xin Qing. / Second-order control volume finite element method for self-heating effects simulation of semiconductor devices. Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 29-30 (Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020).

@inproceedings{8a25e8a6f871499fbc09e4be7c223bee,

title = "Second-order control volume finite element method for self-heating effects simulation of semiconductor devices",

abstract = "A higher-order control volume finite element method for triangular elements is proposed to simulate the self-heating effects of semiconductor devices. In the scheme, the currents of carrier continuity equations are expressed by the second-order accurate fluxes on the triangle edges incorporating second-order vector basis functions. Although the developed scheme is not monotone in theory, the numerical results reveal that the higher-order discretization approach is exceptionally robust and accurate, and the usage of coarser mesh is allowed compared with the first order method.",

keywords = "CVFEM-MS, Self-heating effects, Semiconductor devices",

author = "Yu, {Da Miao} and Pan, {Xiao Min} and Sheng, {Xin Qing}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020 ; Conference date: 24-08-2020 Through 26-08-2020",

year = "2020",

month = aug,

doi = "10.1109/ICCEM47450.2020.9219392",

language = "English",

series = "Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "29--30",

booktitle = "Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020",

address = "United States",

}

Yu, DM, Pan, XM & Sheng, XQ 2020, Second-order control volume finite element method for self-heating effects simulation of semiconductor devices. in Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020., 9219392, Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020, Institute of Electrical and Electronics Engineers Inc., pp. 29-30, 6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020, Singapore, Singapore, 24/08/20. https://doi.org/10.1109/ICCEM47450.2020.9219392

Second-order control volume finite element method for self-heating effects simulation of semiconductor devices. / Yu, Da Miao; Pan, Xiao Min; Sheng, Xin Qing.
Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 29-30 9219392 (Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Second-order control volume finite element method for self-heating effects simulation of semiconductor devices

AU - Yu, Da Miao

AU - Pan, Xiao Min

AU - Sheng, Xin Qing

PY - 2020/8

Y1 - 2020/8

N2 - A higher-order control volume finite element method for triangular elements is proposed to simulate the self-heating effects of semiconductor devices. In the scheme, the currents of carrier continuity equations are expressed by the second-order accurate fluxes on the triangle edges incorporating second-order vector basis functions. Although the developed scheme is not monotone in theory, the numerical results reveal that the higher-order discretization approach is exceptionally robust and accurate, and the usage of coarser mesh is allowed compared with the first order method.

AB - A higher-order control volume finite element method for triangular elements is proposed to simulate the self-heating effects of semiconductor devices. In the scheme, the currents of carrier continuity equations are expressed by the second-order accurate fluxes on the triangle edges incorporating second-order vector basis functions. Although the developed scheme is not monotone in theory, the numerical results reveal that the higher-order discretization approach is exceptionally robust and accurate, and the usage of coarser mesh is allowed compared with the first order method.

KW - CVFEM-MS

KW - Self-heating effects

KW - Semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=85095586983&partnerID=8YFLogxK

U2 - 10.1109/ICCEM47450.2020.9219392

DO - 10.1109/ICCEM47450.2020.9219392

M3 - Conference contribution

AN - SCOPUS:85095586983

T3 - Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020

SP - 29

EP - 30

BT - Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020

Y2 - 24 August 2020 through 26 August 2020

ER -

Yu DM, Pan XM, Sheng XQ. Second-order control volume finite element method for self-heating effects simulation of semiconductor devices. In Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 29-30. 9219392. (Proceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020). doi: 10.1109/ICCEM47450.2020.9219392

Second-order control volume finite element method for self-heating effects simulation of semiconductor devices

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