Second-order control volume finite element method for self-heating effects simulation of semiconductor devices

Da Miao Yu, Xiao Min Pan*, Xin Qing Sheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A higher-order control volume finite element method for triangular elements is proposed to simulate the self-heating effects of semiconductor devices. In the scheme, the currents of carrier continuity equations are expressed by the second-order accurate fluxes on the triangle edges incorporating second-order vector basis functions. Although the developed scheme is not monotone in theory, the numerical results reveal that the higher-order discretization approach is exceptionally robust and accurate, and the usage of coarser mesh is allowed compared with the first order method.

Original languageEnglish
Title of host publicationProceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages29-30
Number of pages2
ISBN (Electronic)9781728168234
DOIs
Publication statusPublished - Aug 2020
Event6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020 - Singapore, Singapore
Duration: 24 Aug 202026 Aug 2020

Publication series

NameProceedings of the 2020 IEEE International Conference on Computational Electromagnetics, ICCEM 2020

Conference

Conference6th IEEE International Conference on Computational Electromagnetics, ICCEM 2020
Country/TerritorySingapore
CitySingapore
Period24/08/2026/08/20

Keywords

  • CVFEM-MS
  • Self-heating effects
  • Semiconductor devices

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