Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Shuo Zhang, Bin Liu, Xi Zhang, Congyang Wen, Haoran Sun, Xianwen Liu, Qi Yao, Xiaorui Zi, Zongchi Bao, Zijin Xiao, Yunsong Zhang, Guangcai Yuan, Jian Guo, Ce Ning, Dawei Shi, Feng Wang, Zhinong Yu*

*此作品的通讯作者

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摘要

In this study, the modification of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with an ultrathin metal oxide layer successfully reduces internal film stress. The introduction of an Al2O3 metal oxide layer effectively diminishes defects within the film and minimizes distortion in the film densification process. A low-temperature annealing process at 200 °C was employed to mitigate thermal expansion differences between the film and the substrate, thus reducing internal stress within the device. Furthermore, we have discovered that this structural modification holds the potential to enhance mechanical stress resistance. This paper offers a novel perspective and an experimental foundation for the stress analysis of flexible TFTs.

源语言英语
文章编号108093
期刊Materials Science in Semiconductor Processing
173
DOI
出版状态已出版 - 4月 2024

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Zhang, S., Liu, B., Zhang, X., Wen, C., Sun, H., Liu, X., Yao, Q., Zi, X., Bao, Z., Xiao, Z., Zhang, Y., Yuan, G., Guo, J., Ning, C., Shi, D., Wang, F., & Yu, Z. (2024). Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer. Materials Science in Semiconductor Processing, 173, 文章 108093. https://doi.org/10.1016/j.mssp.2023.108093