Zhang, S., Liu, B., Zhang, X., Wen, C., Sun, H., Liu, X., Yao, Q., Zi, X., Bao, Z., Xiao, Z., Zhang, Y., Yuan, G., Guo, J., Ning, C., Shi, D., Wang, F., & Yu, Z. (2024). Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer. Materials Science in Semiconductor Processing, 173, 文章 108093. https://doi.org/10.1016/j.mssp.2023.108093
Zhang, Shuo ; Liu, Bin ; Zhang, Xi 等. / Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer. 在: Materials Science in Semiconductor Processing. 2024 ; 卷 173.
@article{30b421d62dce42b58a5d90f90ed8d347,
title = "Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer",
abstract = "In this study, the modification of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with an ultrathin metal oxide layer successfully reduces internal film stress. The introduction of an Al2O3 metal oxide layer effectively diminishes defects within the film and minimizes distortion in the film densification process. A low-temperature annealing process at 200 °C was employed to mitigate thermal expansion differences between the film and the substrate, thus reducing internal stress within the device. Furthermore, we have discovered that this structural modification holds the potential to enhance mechanical stress resistance. This paper offers a novel perspective and an experimental foundation for the stress analysis of flexible TFTs.",
keywords = "IGZO, Internal stress, Thin film transistors, Ultra-thin metal oxide layer",
author = "Shuo Zhang and Bin Liu and Xi Zhang and Congyang Wen and Haoran Sun and Xianwen Liu and Qi Yao and Xiaorui Zi and Zongchi Bao and Zijin Xiao and Yunsong Zhang and Guangcai Yuan and Jian Guo and Ce Ning and Dawei Shi and Feng Wang and Zhinong Yu",
note = "Publisher Copyright: {\textcopyright} 2023",
year = "2024",
month = apr,
doi = "10.1016/j.mssp.2023.108093",
language = "English",
volume = "173",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Ltd.",
}
Zhang, S, Liu, B, Zhang, X, Wen, C, Sun, H, Liu, X, Yao, Q, Zi, X, Bao, Z, Xiao, Z, Zhang, Y, Yuan, G, Guo, J, Ning, C, Shi, D, Wang, F & Yu, Z 2024, 'Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer', Materials Science in Semiconductor Processing, 卷 173, 108093. https://doi.org/10.1016/j.mssp.2023.108093
Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer. / Zhang, Shuo; Liu, Bin; Zhang, Xi 等.
在:
Materials Science in Semiconductor Processing, 卷 173, 108093, 04.2024.
科研成果: 期刊稿件 › 文章 › 同行评审
TY - JOUR
T1 - Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer
AU - Zhang, Shuo
AU - Liu, Bin
AU - Zhang, Xi
AU - Wen, Congyang
AU - Sun, Haoran
AU - Liu, Xianwen
AU - Yao, Qi
AU - Zi, Xiaorui
AU - Bao, Zongchi
AU - Xiao, Zijin
AU - Zhang, Yunsong
AU - Yuan, Guangcai
AU - Guo, Jian
AU - Ning, Ce
AU - Shi, Dawei
AU - Wang, Feng
AU - Yu, Zhinong
N1 - Publisher Copyright:
© 2023
PY - 2024/4
Y1 - 2024/4
N2 - In this study, the modification of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with an ultrathin metal oxide layer successfully reduces internal film stress. The introduction of an Al2O3 metal oxide layer effectively diminishes defects within the film and minimizes distortion in the film densification process. A low-temperature annealing process at 200 °C was employed to mitigate thermal expansion differences between the film and the substrate, thus reducing internal stress within the device. Furthermore, we have discovered that this structural modification holds the potential to enhance mechanical stress resistance. This paper offers a novel perspective and an experimental foundation for the stress analysis of flexible TFTs.
AB - In this study, the modification of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with an ultrathin metal oxide layer successfully reduces internal film stress. The introduction of an Al2O3 metal oxide layer effectively diminishes defects within the film and minimizes distortion in the film densification process. A low-temperature annealing process at 200 °C was employed to mitigate thermal expansion differences between the film and the substrate, thus reducing internal stress within the device. Furthermore, we have discovered that this structural modification holds the potential to enhance mechanical stress resistance. This paper offers a novel perspective and an experimental foundation for the stress analysis of flexible TFTs.
KW - IGZO
KW - Internal stress
KW - Thin film transistors
KW - Ultra-thin metal oxide layer
UR - http://www.scopus.com/inward/record.url?scp=85182273711&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2023.108093
DO - 10.1016/j.mssp.2023.108093
M3 - Article
AN - SCOPUS:85182273711
SN - 1369-8001
VL - 173
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 108093
ER -
Zhang S, Liu B, Zhang X, Wen C, Sun H, Liu X 等. Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer. Materials Science in Semiconductor Processing. 2024 4月;173:108093. doi: 10.1016/j.mssp.2023.108093