Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Shuo Zhang; Bin Liu; Xi Zhang; Congyang Wen; Haoran Sun; Xianwen Liu; Qi Yao; Xiaorui Zi; Zongchi Bao; Zijin Xiao; Yunsong Zhang; Guangcai Yuan; Jian Guo; Ce Ning; Dawei Shi; Feng Wang; Zhinong Yu

doi:10.1016/j.mssp.2023.108093

Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Shuo Zhang, Bin Liu, Xi Zhang, Congyang Wen, Haoran Sun, Xianwen Liu, Qi Yao, Xiaorui Zi, Zongchi Bao, Zijin Xiao, Yunsong Zhang, Guangcai Yuan, Jian Guo, Ce Ning, Dawei Shi, Feng Wang, Zhinong Yu^*

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, the modification of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with an ultrathin metal oxide layer successfully reduces internal film stress. The introduction of an Al₂O₃ metal oxide layer effectively diminishes defects within the film and minimizes distortion in the film densification process. A low-temperature annealing process at 200 °C was employed to mitigate thermal expansion differences between the film and the substrate, thus reducing internal stress within the device. Furthermore, we have discovered that this structural modification holds the potential to enhance mechanical stress resistance. This paper offers a novel perspective and an experimental foundation for the stress analysis of flexible TFTs.

Original language	English
Article number	108093
Journal	Materials Science in Semiconductor Processing
Volume	173
DOIs	https://doi.org/10.1016/j.mssp.2023.108093
Publication status	Published - Apr 2024

Keywords

IGZO
Internal stress
Thin film transistors
Ultra-thin metal oxide layer

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10.1016/j.mssp.2023.108093

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Zhang, S., Liu, B., Zhang, X., Wen, C., Sun, H., Liu, X., Yao, Q., Zi, X., Bao, Z., Xiao, Z., Zhang, Y., Yuan, G., Guo, J., Ning, C., Shi, D., Wang, F., & Yu, Z. (2024). Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer. Materials Science in Semiconductor Processing, 173, Article 108093. https://doi.org/10.1016/j.mssp.2023.108093

@article{30b421d62dce42b58a5d90f90ed8d347,

title = "Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer",

abstract = "In this study, the modification of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with an ultrathin metal oxide layer successfully reduces internal film stress. The introduction of an Al2O3 metal oxide layer effectively diminishes defects within the film and minimizes distortion in the film densification process. A low-temperature annealing process at 200 °C was employed to mitigate thermal expansion differences between the film and the substrate, thus reducing internal stress within the device. Furthermore, we have discovered that this structural modification holds the potential to enhance mechanical stress resistance. This paper offers a novel perspective and an experimental foundation for the stress analysis of flexible TFTs.",

keywords = "IGZO, Internal stress, Thin film transistors, Ultra-thin metal oxide layer",

author = "Shuo Zhang and Bin Liu and Xi Zhang and Congyang Wen and Haoran Sun and Xianwen Liu and Qi Yao and Xiaorui Zi and Zongchi Bao and Zijin Xiao and Yunsong Zhang and Guangcai Yuan and Jian Guo and Ce Ning and Dawei Shi and Feng Wang and Zhinong Yu",

note = "Publisher Copyright: {\textcopyright} 2023",

year = "2024",

month = apr,

doi = "10.1016/j.mssp.2023.108093",

language = "English",

volume = "173",

journal = "Materials Science in Semiconductor Processing",

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TY - JOUR

T1 - Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

AU - Zhang, Shuo

AU - Liu, Bin

AU - Zhang, Xi

AU - Wen, Congyang

AU - Sun, Haoran

AU - Liu, Xianwen

AU - Yao, Qi

AU - Zi, Xiaorui

AU - Bao, Zongchi

AU - Xiao, Zijin

AU - Zhang, Yunsong

AU - Yuan, Guangcai

AU - Guo, Jian

AU - Ning, Ce

AU - Shi, Dawei

AU - Wang, Feng

AU - Yu, Zhinong

PY - 2024/4

Y1 - 2024/4

N2 - In this study, the modification of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with an ultrathin metal oxide layer successfully reduces internal film stress. The introduction of an Al2O3 metal oxide layer effectively diminishes defects within the film and minimizes distortion in the film densification process. A low-temperature annealing process at 200 °C was employed to mitigate thermal expansion differences between the film and the substrate, thus reducing internal stress within the device. Furthermore, we have discovered that this structural modification holds the potential to enhance mechanical stress resistance. This paper offers a novel perspective and an experimental foundation for the stress analysis of flexible TFTs.

AB - In this study, the modification of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with an ultrathin metal oxide layer successfully reduces internal film stress. The introduction of an Al2O3 metal oxide layer effectively diminishes defects within the film and minimizes distortion in the film densification process. A low-temperature annealing process at 200 °C was employed to mitigate thermal expansion differences between the film and the substrate, thus reducing internal stress within the device. Furthermore, we have discovered that this structural modification holds the potential to enhance mechanical stress resistance. This paper offers a novel perspective and an experimental foundation for the stress analysis of flexible TFTs.

KW - IGZO

KW - Internal stress

KW - Thin film transistors

KW - Ultra-thin metal oxide layer

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U2 - 10.1016/j.mssp.2023.108093

DO - 10.1016/j.mssp.2023.108093

M3 - Article

AN - SCOPUS:85182273711

SN - 1369-8001

VL - 173

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 108093

ER -

Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

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Keywords

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