摘要
Si-rich SiO2 films with three different degrees of Si-richness were deposited by RF magnetron sputtering using Si-SiO2 composite targets. X-ray photoelectron spectroscopy measurements indicate that Si clusters were present in the as-deposited films. The precipitation and crystallization of nanometer Si clusters in SiO2 films annealed at high temperatures have been studied using high-resolution transmission electron microscopy and electron diffraction. Si nanocrystallites were observed in the sample deposited using a Si-SiO2 composite target having a 30% area of Si and which had been annealed at 900 °C. The average size and density of Si nanocrystallites in the films increased notably as the annealing temperature was increased from 900 to 1100 °C. Thus, using a 1100 °C anneal and increasing the area percentage of Si in the composite target from 20 to 30%, the average size of Si nanocrystallites increased about 15%, and the density of Si nanocrystallites increased by a factor of about 2.5.
源语言 | 英语 |
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页(从-至) | 109-114 |
页数 | 6 |
期刊 | Journal of Crystal Growth |
卷 | 212 |
期 | 1 |
DOI | |
出版状态 | 已出版 - 2000 |
已对外发布 | 是 |