One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

Xiang Yu Wang; Hua Zhang Zhai; Chuan Bao Cao; Hong Nian Cai; Yu Wang; Helen L.W. Chan

doi:10.1039/b820954e

One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

Xiang Yu Wang, Hua Zhang Zhai^*, Chuan Bao Cao, Hong Nian Cai, Yu Wang, Helen L.W. Chan

^*此作品的通讯作者

材料学院

科研成果: 期刊稿件 › 文章 › 同行评审

16 引用（Scopus）

摘要

SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl₄, C₆Cl₆ and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.

源语言	英语
页（从-至）	2958-2962
页数	5
期刊	Journal of Materials Chemistry
卷	19
期	19
DOI	https://doi.org/10.1039/b820954e
出版状态	已出版 - 2009

访问文件

10.1039/b820954e

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{095cf4a986d743379af5ededdbb3a54f,

title = "One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature",

abstract = "SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl4, C6Cl6 and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.",

author = "Wang, {Xiang Yu} and Zhai, {Hua Zhang} and Cao, {Chuan Bao} and Cai, {Hong Nian} and Yu Wang and Chan, {Helen L.W.}",

year = "2009",

doi = "10.1039/b820954e",

language = "English",

volume = "19",

pages = "2958--2962",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "19",

}

TY - JOUR

T1 - One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

AU - Wang, Xiang Yu

AU - Zhai, Hua Zhang

AU - Cao, Chuan Bao

AU - Cai, Hong Nian

AU - Wang, Yu

AU - Chan, Helen L.W.

PY - 2009

Y1 - 2009

N2 - SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl4, C6Cl6 and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.

AB - SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl4, C6Cl6 and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.

UR - http://www.scopus.com/inward/record.url?scp=65549089593&partnerID=8YFLogxK

U2 - 10.1039/b820954e

DO - 10.1039/b820954e

M3 - Article

AN - SCOPUS:65549089593

SN - 0959-9428

VL - 19

SP - 2958

EP - 2962

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 19

ER -

One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

摘要

访问文件

其它文件与链接

指纹

引用此