One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

Xiang Yu Wang; Hua Zhang Zhai; Chuan Bao Cao; Hong Nian Cai; Yu Wang; Helen L.W. Chan

doi:10.1039/b820954e

One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

Xiang Yu Wang, Hua Zhang Zhai^*, Chuan Bao Cao, Hong Nian Cai, Yu Wang, Helen L.W. Chan

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl₄, C₆Cl₆ and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.

Original language	English
Pages (from-to)	2958-2962
Number of pages	5
Journal	Journal of Materials Chemistry
Volume	19
Issue number	19
DOIs	https://doi.org/10.1039/b820954e
Publication status	Published - 2009

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title = "One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature",

abstract = "SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl4, C6Cl6 and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.",

author = "Wang, {Xiang Yu} and Zhai, {Hua Zhang} and Cao, {Chuan Bao} and Cai, {Hong Nian} and Yu Wang and Chan, {Helen L.W.}",

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T1 - One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

AU - Wang, Xiang Yu

AU - Zhai, Hua Zhang

AU - Cao, Chuan Bao

AU - Cai, Hong Nian

AU - Wang, Yu

AU - Chan, Helen L.W.

PY - 2009

Y1 - 2009

N2 - SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl4, C6Cl6 and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.

AB - SiC-C coaxial nanocables were synthesized via a one-step and low-temperature (∼250 °C) solvothermal process using SiCl4, C6Cl6 and Na as starting materials. The orientation accumulation of β-SiC tapered crystallite nanowires coated by an amorphous carbon sheath was formed. The mechanism of the growth of SiC nanocables at low temperature is discussed.

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U2 - 10.1039/b820954e

DO - 10.1039/b820954e

M3 - Article

AN - SCOPUS:65549089593

SN - 0959-9428

VL - 19

SP - 2958

EP - 2962

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 19

ER -

One-step synthesis of orientation accumulation SiC-C coaxial nanocables at low temperature

Abstract

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