One-dimensional nanostructures and devices of II-V group semiconductors

Guozhen Shen*, Di Chen

*此作品的通讯作者

科研成果: 期刊稿件文献综述同行评审

41 引用 (Scopus)

摘要

The II-V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn 3P 2 nanowires, one-dimensional (1-D) nanostructures of II-V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II-V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II-V semiconducting nanostructures will also be discussed, which include metal-insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and p-n heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.

源语言英语
页(从-至)779-788
页数10
期刊Nanoscale Research Letters
4
8
DOI
出版状态已出版 - 2009
已对外发布

指纹

探究 'One-dimensional nanostructures and devices of II-V group semiconductors' 的科研主题。它们共同构成独一无二的指纹。

引用此