One-dimensional nanostructures and devices of II-V group semiconductors

Guozhen Shen*, Di Chen

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

41 Citations (Scopus)

Abstract

The II-V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn 3P 2 nanowires, one-dimensional (1-D) nanostructures of II-V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II-V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II-V semiconducting nanostructures will also be discussed, which include metal-insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and p-n heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.

Original languageEnglish
Pages (from-to)779-788
Number of pages10
JournalNanoscale Research Letters
Volume4
Issue number8
DOIs
Publication statusPublished - 2009
Externally publishedYes

Keywords

  • Nanobelts
  • Nanoelectronics
  • Nanotubes
  • Nanowires
  • Semiconductors

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