Manipulation of current rectification in van der Waals ferroionic CuInP2S6

Xingan Jiang, Xueyun Wang*, Xiaolei Wang*, Xiangping Zhang, Ruirui Niu, Jianming Deng, Sheng Xu, Yingzhuo Lun, Yanyu Liu, Tianlong Xia, Jianming Lu, Jiawang Hong*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

91 引用 (Scopus)

摘要

Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.

源语言英语
文章编号574
期刊Nature Communications
13
1
DOI
出版状态已出版 - 12月 2022

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