Jiang, X., Wang, X., Wang, X., Zhang, X., Niu, R., Deng, J., Xu, S., Lun, Y., Liu, Y., Xia, T., Lu, J., & Hong, J. (2022). Manipulation of current rectification in van der Waals ferroionic CuInP2S6. Nature Communications, 13(1), 文章 574. https://doi.org/10.1038/s41467-022-28235-6
Jiang, Xingan ; Wang, Xueyun ; Wang, Xiaolei 等. / Manipulation of current rectification in van der Waals ferroionic CuInP2S6. 在: Nature Communications. 2022 ; 卷 13, 号码 1.
@article{81e7048fe0134c5db8a9cc9c6ab162e2,
title = "Manipulation of current rectification in van der Waals ferroionic CuInP2S6",
abstract = "Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.",
author = "Xingan Jiang and Xueyun Wang and Xiaolei Wang and Xiangping Zhang and Ruirui Niu and Jianming Deng and Sheng Xu and Yingzhuo Lun and Yanyu Liu and Tianlong Xia and Jianming Lu and Jiawang Hong",
note = "Publisher Copyright: {\textcopyright} 2022, The Author(s).",
year = "2022",
month = dec,
doi = "10.1038/s41467-022-28235-6",
language = "English",
volume = "13",
journal = "Nature Communications",
issn = "2041-1723",
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Jiang, X, Wang, X, Wang, X, Zhang, X, Niu, R, Deng, J, Xu, S, Lun, Y, Liu, Y, Xia, T, Lu, J & Hong, J 2022, 'Manipulation of current rectification in van der Waals ferroionic CuInP2S6', Nature Communications, 卷 13, 号码 1, 574. https://doi.org/10.1038/s41467-022-28235-6
Manipulation of current rectification in van der Waals ferroionic CuInP2S6. / Jiang, Xingan
; Wang, Xueyun; Wang, Xiaolei 等.
在:
Nature Communications, 卷 13, 号码 1, 574, 12.2022.
科研成果: 期刊稿件 › 文章 › 同行评审
TY - JOUR
T1 - Manipulation of current rectification in van der Waals ferroionic CuInP2S6
AU - Jiang, Xingan
AU - Wang, Xueyun
AU - Wang, Xiaolei
AU - Zhang, Xiangping
AU - Niu, Ruirui
AU - Deng, Jianming
AU - Xu, Sheng
AU - Lun, Yingzhuo
AU - Liu, Yanyu
AU - Xia, Tianlong
AU - Lu, Jianming
AU - Hong, Jiawang
N1 - Publisher Copyright:
© 2022, The Author(s).
PY - 2022/12
Y1 - 2022/12
N2 - Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.
AB - Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.
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Jiang X, Wang X, Wang X, Zhang X, Niu R, Deng J 等. Manipulation of current rectification in van der Waals ferroionic CuInP2S6. Nature Communications. 2022 12月;13(1):574. doi: 10.1038/s41467-022-28235-6
