Manipulation of current rectification in van der Waals ferroionic CuInP2S6

Xingan Jiang; Xueyun Wang; Xiaolei Wang; Xiangping Zhang; Ruirui Niu; Jianming Deng; Sheng Xu; Yingzhuo Lun; Yanyu Liu; Tianlong Xia; Jianming Lu; Jiawang Hong

doi:10.1038/s41467-022-28235-6

Manipulation of current rectification in van der Waals ferroionic CuInP₂S₆

Xingan Jiang, Xueyun Wang^*, Xiaolei Wang^*, Xiangping Zhang, Ruirui Niu, Jianming Deng, Sheng Xu, Yingzhuo Lun, Yanyu Liu, Tianlong Xia, Jianming Lu, Jiawang Hong^*

^*Corresponding author for this work

School of Aerospace Engineering

Research output: Contribution to journal › Article › peer-review

91 Citations (Scopus)

Abstract

Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP₂S₆ as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu⁺ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.

Original language	English
Article number	574
Journal	Nature Communications
Volume	13
Issue number	1
DOIs	https://doi.org/10.1038/s41467-022-28235-6
Publication status	Published - Dec 2022

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abstract = "Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.",

author = "Xingan Jiang and Xueyun Wang and Xiaolei Wang and Xiangping Zhang and Ruirui Niu and Jianming Deng and Sheng Xu and Yingzhuo Lun and Yanyu Liu and Tianlong Xia and Jianming Lu and Jiawang Hong",

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AU - Jiang, Xingan

AU - Wang, Xueyun

AU - Wang, Xiaolei

AU - Zhang, Xiangping

AU - Niu, Ruirui

AU - Deng, Jianming

AU - Xu, Sheng

AU - Lun, Yingzhuo

AU - Liu, Yanyu

AU - Xia, Tianlong

AU - Lu, Jianming

AU - Hong, Jiawang

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Y1 - 2022/12

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AB - Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.

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Manipulation of current rectification in van der Waals ferroionic CuInP₂S₆

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