摘要
Emergence of ferromagnetism in nonmagnetic semiconductors is strongly desirable, especially in topological materials because of the possibility of achieving the quantum anomalous Hall effect. Based on first-principles calculations, we propose that for Si thin film grown on metal substrate, the pristine Si(111)-3×3 surface with a spontaneous weak reconstruction has a strong tendency toward ferromagnetism and nontrivial topological properties, characterized by spin-polarized Dirac-fermion surface states. In contrast to conventional routes relying on introduction of alien charge carriers or specially patterned substrates, the spontaneous magnetic order and spin-orbit coupling on the pristine silicon surface together give rise to the quantized anomalous Hall effect with a finite Chern number C=-1. This work suggests opportunities in silicon-based spintronics and quantum computing free from alien dopants or proximity effects.
源语言 | 英语 |
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文章编号 | 035427 |
期刊 | Physical Review B |
卷 | 94 |
期 | 3 |
DOI | |
出版状态 | 已出版 - 18 7月 2016 |
已对外发布 | 是 |