Magnetic Dirac fermions and Chern insulator supported on pristine silicon surface

Huixia Fu, Zheng Liu, Chao Lian, Jin Zhang, Hui Li, Jia Tao Sun*, Sheng Meng

*Corresponding author for this work

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Abstract

Emergence of ferromagnetism in nonmagnetic semiconductors is strongly desirable, especially in topological materials because of the possibility of achieving the quantum anomalous Hall effect. Based on first-principles calculations, we propose that for Si thin film grown on metal substrate, the pristine Si(111)-3×3 surface with a spontaneous weak reconstruction has a strong tendency toward ferromagnetism and nontrivial topological properties, characterized by spin-polarized Dirac-fermion surface states. In contrast to conventional routes relying on introduction of alien charge carriers or specially patterned substrates, the spontaneous magnetic order and spin-orbit coupling on the pristine silicon surface together give rise to the quantized anomalous Hall effect with a finite Chern number C=-1. This work suggests opportunities in silicon-based spintronics and quantum computing free from alien dopants or proximity effects.

Original languageEnglish
Article number035427
JournalPhysical Review B
Volume94
Issue number3
DOIs
Publication statusPublished - 18 Jul 2016
Externally publishedYes

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Fu, H., Liu, Z., Lian, C., Zhang, J., Li, H., Sun, J. T., & Meng, S. (2016). Magnetic Dirac fermions and Chern insulator supported on pristine silicon surface. Physical Review B, 94(3), Article 035427. https://doi.org/10.1103/PhysRevB.94.035427