Key factors affecting photoelectrochemical performance of g-C3N4 polymer films

Qiushi Ruan; Mustafa K. Bayazit; Vankayala Kiran; Jijia Xie; Yiou Wang; Junwang Tang

doi:10.1039/c9cc03084k

Key factors affecting photoelectrochemical performance of g-C₃N₄ polymer films

Qiushi Ruan, Mustafa K. Bayazit, Vankayala Kiran, Jijia Xie, Yiou Wang, Junwang Tang^*

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

52 引用（Scopus）

摘要

We investigated the relationship between crystallinity, deep trap states and PEC performance of g-C₃N₄ photoelectrodes. Long-lived charge carriers were present in the more poorly crystalline samples, due to deeper trap states, which inversely correlated with photoelectrochemical performance. The charge diffusion length in a compact g-C₃N₄ film was determined to be ca. 1000 nm.

源语言	英语
页（从-至）	7191-7194
页数	4
期刊	Chemical Communications
卷	55
期	50
DOI	https://doi.org/10.1039/c9cc03084k
出版状态	已出版 - 2019
已对外发布	是

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10.1039/c9cc03084k

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AU - Wang, Yiou

AU - Tang, Junwang

PY - 2019

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Key factors affecting photoelectrochemical performance of g-C3N4 polymer films

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Key factors affecting photoelectrochemical performance of g-C₃N₄ polymer films