Key factors affecting photoelectrochemical performance of g-C3N4 polymer films

Qiushi Ruan; Mustafa K. Bayazit; Vankayala Kiran; Jijia Xie; Yiou Wang; Junwang Tang

doi:10.1039/c9cc03084k

Key factors affecting photoelectrochemical performance of g-C₃N₄ polymer films

Qiushi Ruan, Mustafa K. Bayazit, Vankayala Kiran, Jijia Xie, Yiou Wang, Junwang Tang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

We investigated the relationship between crystallinity, deep trap states and PEC performance of g-C₃N₄ photoelectrodes. Long-lived charge carriers were present in the more poorly crystalline samples, due to deeper trap states, which inversely correlated with photoelectrochemical performance. The charge diffusion length in a compact g-C₃N₄ film was determined to be ca. 1000 nm.

Original language	English
Pages (from-to)	7191-7194
Number of pages	4
Journal	Chemical Communications
Volume	55
Issue number	50
DOIs	https://doi.org/10.1039/c9cc03084k
Publication status	Published - 2019
Externally published	Yes

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title = "Key factors affecting photoelectrochemical performance of g-C3N4 polymer films",

abstract = "We investigated the relationship between crystallinity, deep trap states and PEC performance of g-C3N4 photoelectrodes. Long-lived charge carriers were present in the more poorly crystalline samples, due to deeper trap states, which inversely correlated with photoelectrochemical performance. The charge diffusion length in a compact g-C3N4 film was determined to be ca. 1000 nm.",

author = "Qiushi Ruan and Bayazit, {Mustafa K.} and Vankayala Kiran and Jijia Xie and Yiou Wang and Junwang Tang",

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AU - Ruan, Qiushi

AU - Bayazit, Mustafa K.

AU - Kiran, Vankayala

AU - Xie, Jijia

AU - Wang, Yiou

AU - Tang, Junwang

PY - 2019

Y1 - 2019

N2 - We investigated the relationship between crystallinity, deep trap states and PEC performance of g-C3N4 photoelectrodes. Long-lived charge carriers were present in the more poorly crystalline samples, due to deeper trap states, which inversely correlated with photoelectrochemical performance. The charge diffusion length in a compact g-C3N4 film was determined to be ca. 1000 nm.

AB - We investigated the relationship between crystallinity, deep trap states and PEC performance of g-C3N4 photoelectrodes. Long-lived charge carriers were present in the more poorly crystalline samples, due to deeper trap states, which inversely correlated with photoelectrochemical performance. The charge diffusion length in a compact g-C3N4 film was determined to be ca. 1000 nm.

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DO - 10.1039/c9cc03084k

M3 - Article

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SN - 1359-7345

VL - 55

SP - 7191

EP - 7194

JO - Chemical Communications

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IS - 50

ER -

Key factors affecting photoelectrochemical performance of g-C₃N₄ polymer films

Abstract

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