High-power Nd:GdVO4 innoslab continuous-wave laser under direct 880 nm pumping

Bo Deng; Heng Li Zhang; Liu Xu; Ye Fei Mao; Jing Liang He; Jian Guo Xin

doi:10.1088/0256-307X/31/11/114201

High-power Nd:GdVO₄ innoslab continuous-wave laser under direct 880 nm pumping

Bo Deng, Heng Li Zhang^*, Liu Xu, Ye Fei Mao, Jing Liang He, Jian Guo Xin

^*此作品的通讯作者

光电学院

科研成果: 期刊稿件 › 文章 › 同行评审

6 引用（Scopus）

摘要

A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO₄ operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO₄ into emitting level ⁴F_3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M² factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.

源语言	英语
文章编号	114201
期刊	Chinese Physics Letters
卷	31
期	11
DOI	https://doi.org/10.1088/0256-307X/31/11/114201
出版状态	已出版 - 1 11月 2014

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Deng, B., Zhang, H. L., Xu, L., Mao, Y. F., He, J. L., & Xin, J. G. (2014). High-power Nd:GdVO₄ innoslab continuous-wave laser under direct 880 nm pumping. Chinese Physics Letters, 31(11), 文章 114201. https://doi.org/10.1088/0256-307X/31/11/114201

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title = "High-power Nd:GdVO4 innoslab continuous-wave laser under direct 880 nm pumping",

abstract = "A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO4 operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO4 into emitting level 4F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.",

author = "Bo Deng and Zhang, {Heng Li} and Liu Xu and Mao, {Ye Fei} and He, {Jing Liang} and Xin, {Jian Guo}",

note = "Publisher Copyright: {\textcopyright} 2014 Chinese Physical Society and IOP Publishing Ltd.",

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doi = "10.1088/0256-307X/31/11/114201",

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AU - Deng, Bo

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AU - Xu, Liu

AU - Mao, Ye Fei

AU - He, Jing Liang

AU - Xin, Jian Guo

PY - 2014/11/1

Y1 - 2014/11/1

N2 - A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO4 operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO4 into emitting level 4F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.

AB - A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO4 operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO4 into emitting level 4F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.

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JO - Chinese Physics Letters

JF - Chinese Physics Letters

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M1 - 114201

ER -

High-power Nd:GdVO4 innoslab continuous-wave laser under direct 880 nm pumping

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High-power Nd:GdVO₄ innoslab continuous-wave laser under direct 880 nm pumping