High-power Nd:GdVO4 innoslab continuous-wave laser under direct 880 nm pumping

Bo Deng; Heng Li Zhang; Liu Xu; Ye Fei Mao; Jing Liang He; Jian Guo Xin

doi:10.1088/0256-307X/31/11/114201

High-power Nd:GdVO₄ innoslab continuous-wave laser under direct 880 nm pumping

Bo Deng, Heng Li Zhang^*, Liu Xu, Ye Fei Mao, Jing Liang He, Jian Guo Xin

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO₄ operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO₄ into emitting level ⁴F_3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M² factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.

Original language	English
Article number	114201
Journal	Chinese Physics Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1088/0256-307X/31/11/114201
Publication status	Published - 1 Nov 2014

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title = "High-power Nd:GdVO4 innoslab continuous-wave laser under direct 880 nm pumping",

abstract = "A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO4 operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO4 into emitting level 4F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.",

author = "Bo Deng and Zhang, {Heng Li} and Liu Xu and Mao, {Ye Fei} and He, {Jing Liang} and Xin, {Jian Guo}",

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AU - Deng, Bo

AU - Zhang, Heng Li

AU - Xu, Liu

AU - Mao, Ye Fei

AU - He, Jing Liang

AU - Xin, Jian Guo

PY - 2014/11/1

Y1 - 2014/11/1

N2 - A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO4 operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO4 into emitting level 4F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.

AB - A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO4 operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO4 into emitting level 4F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.

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VL - 31

JO - Chinese Physics Letters

JF - Chinese Physics Letters

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ER -

High-power Nd:GdVO₄ innoslab continuous-wave laser under direct 880 nm pumping

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