Growth and properties of ITO films on flexible polyimide(PI) substrates

Jing Hu; Zhinong Yu; Shiyu Zhang; Jianshe Xue; Guanbao Hui; Wei Xue

doi:10.3788/gxjs20144005.0465

Growth and properties of ITO films on flexible polyimide(PI) substrates

Jing Hu, Zhinong Yu^*, Shiyu Zhang, Jianshe Xue, Guanbao Hui, Wei Xue

^*此作品的通讯作者

光电学院

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

Indium tin oxide(ITO)films are prepared on flexible polyimide(PI) substrates by RF magnetron sputtering. The influences of oxygen ratio, sputtering power, working pressure and deposition temperature on the morphology and the photoelectric properties of ITO films are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), four-probe tester and spectrophotometry. The experiment results reveals that the optimal conditions are sputtering atmosphere of pure argon, sputtering power of 200W, working pressure of 1.5Pa and substrate temperature of 185℃~225℃. Under the optimal condition, the resistivity of 3.64×10^-4 Ω·cm and transmittance of 97% are achieved.

源语言	英语
页（从-至）	465-469
页数	5
期刊	Guangxue Jishu/Optical Technique
卷	40
期	5
DOI	https://doi.org/10.3788/gxjs20144005.0465
出版状态	已出版 - 1 9月 2014

访问文件

10.3788/gxjs20144005.0465

其它文件与链接

链接到 Scopus 的出版物

引用此

Hu, J., Yu, Z., Zhang, S., Xue, J., Hui, G., & Xue, W. (2014). Growth and properties of ITO films on flexible polyimide(PI) substrates. Guangxue Jishu/Optical Technique, 40(5), 465-469. https://doi.org/10.3788/gxjs20144005.0465

@article{e26d7c34a9514ef8adaf333d8ba192be,

title = "Growth and properties of ITO films on flexible polyimide(PI) substrates",

abstract = "Indium tin oxide(ITO)films are prepared on flexible polyimide(PI) substrates by RF magnetron sputtering. The influences of oxygen ratio, sputtering power, working pressure and deposition temperature on the morphology and the photoelectric properties of ITO films are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), four-probe tester and spectrophotometry. The experiment results reveals that the optimal conditions are sputtering atmosphere of pure argon, sputtering power of 200W, working pressure of 1.5Pa and substrate temperature of 185℃~225℃. Under the optimal condition, the resistivity of 3.64×10-4 Ω·cm and transmittance of 97% are achieved.",

keywords = "Indium-doped tin oxide, Polyimide (PI), RF magnetron sputtering, Resistivity, Transmittance",

author = "Jing Hu and Zhinong Yu and Shiyu Zhang and Jianshe Xue and Guanbao Hui and Wei Xue",

year = "2014",

month = sep,

day = "1",

doi = "10.3788/gxjs20144005.0465",

language = "English",

volume = "40",

pages = "465--469",

journal = "Guangxue Jishu/Optical Technique",

issn = "1002-1582",

publisher = "Optical Technique",

number = "5",

}

TY - JOUR

T1 - Growth and properties of ITO films on flexible polyimide(PI) substrates

AU - Hu, Jing

AU - Yu, Zhinong

AU - Zhang, Shiyu

AU - Xue, Jianshe

AU - Hui, Guanbao

AU - Xue, Wei

PY - 2014/9/1

Y1 - 2014/9/1

N2 - Indium tin oxide(ITO)films are prepared on flexible polyimide(PI) substrates by RF magnetron sputtering. The influences of oxygen ratio, sputtering power, working pressure and deposition temperature on the morphology and the photoelectric properties of ITO films are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), four-probe tester and spectrophotometry. The experiment results reveals that the optimal conditions are sputtering atmosphere of pure argon, sputtering power of 200W, working pressure of 1.5Pa and substrate temperature of 185℃~225℃. Under the optimal condition, the resistivity of 3.64×10-4 Ω·cm and transmittance of 97% are achieved.

AB - Indium tin oxide(ITO)films are prepared on flexible polyimide(PI) substrates by RF magnetron sputtering. The influences of oxygen ratio, sputtering power, working pressure and deposition temperature on the morphology and the photoelectric properties of ITO films are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), four-probe tester and spectrophotometry. The experiment results reveals that the optimal conditions are sputtering atmosphere of pure argon, sputtering power of 200W, working pressure of 1.5Pa and substrate temperature of 185℃~225℃. Under the optimal condition, the resistivity of 3.64×10-4 Ω·cm and transmittance of 97% are achieved.

KW - Indium-doped tin oxide

KW - Polyimide (PI)

KW - RF magnetron sputtering

KW - Resistivity

KW - Transmittance

UR - http://www.scopus.com/inward/record.url?scp=84907618421&partnerID=8YFLogxK

U2 - 10.3788/gxjs20144005.0465

DO - 10.3788/gxjs20144005.0465

M3 - Article

AN - SCOPUS:84907618421

SN - 1002-1582

VL - 40

SP - 465

EP - 469

JO - Guangxue Jishu/Optical Technique

JF - Guangxue Jishu/Optical Technique

IS - 5

ER -

Growth and properties of ITO films on flexible polyimide(PI) substrates

摘要

访问文件

其它文件与链接

指纹

引用此