TY - JOUR
T1 - Growth and properties of ITO films on flexible polyimide(PI) substrates
AU - Hu, Jing
AU - Yu, Zhinong
AU - Zhang, Shiyu
AU - Xue, Jianshe
AU - Hui, Guanbao
AU - Xue, Wei
PY - 2014/9/1
Y1 - 2014/9/1
N2 - Indium tin oxide(ITO)films are prepared on flexible polyimide(PI) substrates by RF magnetron sputtering. The influences of oxygen ratio, sputtering power, working pressure and deposition temperature on the morphology and the photoelectric properties of ITO films are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), four-probe tester and spectrophotometry. The experiment results reveals that the optimal conditions are sputtering atmosphere of pure argon, sputtering power of 200W, working pressure of 1.5Pa and substrate temperature of 185℃~225℃. Under the optimal condition, the resistivity of 3.64×10-4 Ω·cm and transmittance of 97% are achieved.
AB - Indium tin oxide(ITO)films are prepared on flexible polyimide(PI) substrates by RF magnetron sputtering. The influences of oxygen ratio, sputtering power, working pressure and deposition temperature on the morphology and the photoelectric properties of ITO films are investigated by scanning electron microscope (SEM), X-ray diffraction (XRD), four-probe tester and spectrophotometry. The experiment results reveals that the optimal conditions are sputtering atmosphere of pure argon, sputtering power of 200W, working pressure of 1.5Pa and substrate temperature of 185℃~225℃. Under the optimal condition, the resistivity of 3.64×10-4 Ω·cm and transmittance of 97% are achieved.
KW - Indium-doped tin oxide
KW - Polyimide (PI)
KW - RF magnetron sputtering
KW - Resistivity
KW - Transmittance
UR - http://www.scopus.com/inward/record.url?scp=84907618421&partnerID=8YFLogxK
U2 - 10.3788/gxjs20144005.0465
DO - 10.3788/gxjs20144005.0465
M3 - Article
AN - SCOPUS:84907618421
SN - 1002-1582
VL - 40
SP - 465
EP - 469
JO - Guangxue Jishu/Optical Technique
JF - Guangxue Jishu/Optical Technique
IS - 5
ER -