Erratum: Single β -Ga2O3nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)

Siyuan Xu, Lining Liu, Guangming Qu, Xingfei Zhang, Chunyang Jia, Songhao Wu, Yuanxiao Ma, Young Jin Lee, Guodong Wang, Ji Hyeon Park*, Yiyun Zhang*, Xiaoyan Yi, Yeliang Wang, Jinmin Li

*此作品的通讯作者

科研成果: 期刊稿件评论/辩论

摘要

In the original published article,1 there was a typing error in Eq. (3). Equation (3) is correct as it appears below: A = qαlH /VGS- VthCG. The error is present only in the equation; none of the figures, discussions, or results in the paper are affected.

源语言英语
文章编号089901
期刊Applied Physics Letters
122
8
DOI
出版状态已出版 - 20 2月 2023

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