@article{c61be4a42a4e428b83799a39db87bac2,
title = "Erratum: Single β -Ga2O3nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)",
abstract = "In the original published article,1 there was a typing error in Eq. (3). Equation (3) is correct as it appears below: A = qαlH /VGS- VthCG. The error is present only in the equation; none of the figures, discussions, or results in the paper are affected.",
author = "Siyuan Xu and Lining Liu and Guangming Qu and Xingfei Zhang and Chunyang Jia and Songhao Wu and Yuanxiao Ma and Lee, {Young Jin} and Guodong Wang and Park, {Ji Hyeon} and Yiyun Zhang and Xiaoyan Yi and Yeliang Wang and Jinmin Li",
note = "Publisher Copyright: {\textcopyright} 2023 American Institute of Physics Inc.. All rights reserved.",
year = "2023",
month = feb,
day = "20",
doi = "10.1063/5.0145193",
language = "English",
volume = "122",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "8",
}