Erratum: Single β -Ga2O3nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)

Siyuan Xu; Lining Liu; Guangming Qu; Xingfei Zhang; Chunyang Jia; Songhao Wu; Yuanxiao Ma; Young Jin Lee; Guodong Wang; Ji Hyeon Park; Yiyun Zhang; Xiaoyan Yi; Yeliang Wang; Jinmin Li

doi:10.1063/5.0145193

Erratum: Single β -Ga₂O₃nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)

Siyuan Xu, Lining Liu, Guangming Qu, Xingfei Zhang, Chunyang Jia, Songhao Wu, Yuanxiao Ma, Young Jin Lee, Guodong Wang, Ji Hyeon Park^*, Yiyun Zhang^*, Xiaoyan Yi, Yeliang Wang, Jinmin Li

^*此作品的通讯作者

集成电路与电子学院

科研成果: 期刊稿件 › 评论/辩论

摘要

In the original published article,1 there was a typing error in Eq. (3). Equation (3) is correct as it appears below: A = qαlH /V_GS- V_thC_G. The error is present only in the equation; none of the figures, discussions, or results in the paper are affected.

源语言	英语
文章编号	089901
期刊	Applied Physics Letters
卷	122
期	8
DOI	https://doi.org/10.1063/5.0145193
出版状态	已出版 - 20 2月 2023

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@article{c61be4a42a4e428b83799a39db87bac2,

title = "Erratum: Single β -Ga2O3nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)",

abstract = "In the original published article,1 there was a typing error in Eq. (3). Equation (3) is correct as it appears below: A = qαlH /VGS- VthCG. The error is present only in the equation; none of the figures, discussions, or results in the paper are affected.",

author = "Siyuan Xu and Lining Liu and Guangming Qu and Xingfei Zhang and Chunyang Jia and Songhao Wu and Yuanxiao Ma and Lee, {Young Jin} and Guodong Wang and Park, {Ji Hyeon} and Yiyun Zhang and Xiaoyan Yi and Yeliang Wang and Jinmin Li",

year = "2023",

month = feb,

day = "20",

doi = "10.1063/5.0145193",

language = "English",

volume = "122",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

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TY - JOUR

T1 - Erratum

T2 - Single β -Ga2O3nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)

AU - Xu, Siyuan

AU - Liu, Lining

AU - Qu, Guangming

AU - Zhang, Xingfei

AU - Jia, Chunyang

AU - Wu, Songhao

AU - Ma, Yuanxiao

AU - Lee, Young Jin

AU - Wang, Guodong

AU - Park, Ji Hyeon

AU - Zhang, Yiyun

AU - Yi, Xiaoyan

AU - Wang, Yeliang

AU - Li, Jinmin

PY - 2023/2/20

Y1 - 2023/2/20

N2 - In the original published article,1 there was a typing error in Eq. (3). Equation (3) is correct as it appears below: A = qαlH /VGS- VthCG. The error is present only in the equation; none of the figures, discussions, or results in the paper are affected.

AB - In the original published article,1 there was a typing error in Eq. (3). Equation (3) is correct as it appears below: A = qαlH /VGS- VthCG. The error is present only in the equation; none of the figures, discussions, or results in the paper are affected.

UR - http://www.scopus.com/inward/record.url?scp=85148770540&partnerID=8YFLogxK

U2 - 10.1063/5.0145193

DO - 10.1063/5.0145193

M3 - Comment/debate

AN - SCOPUS:85148770540

SN - 0003-6951

VL - 122

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 089901

ER -

Erratum: Single β -Ga2O3nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)

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Erratum: Single β -Ga₂O₃nanowire based lateral FinFET on Si (Appl. Phys. Lett. (2022) 120 (153501) DOI: 10.1063/5.0086909)