Enabling continuous Cu seed layer for deep through-silicon-vias with high aspect ratio by sequential sputtering and electroless plating

Ziyue Zhang, Yingtao Ding, Lei Xiao, Ziru Cai, Baoyan Yang, Zhiming Chen*, Huikai Xie

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摘要

This letter presents a new strategy for the formation of continuous Cu seed layer in high aspect ratio (HAR) through-silicon-vias (TSVs) with large depth based on sequential sputtering and electroless plating. The deposited seed layer is continuous and dense even at the bottom of the TSVs,which is difficult to achieveby individual sputtering or electroless plating. Combined with the spin coating of polyimide (PI) liner, atomic layer deposition (ALD) of TiN barrier layer, and electroplating of Cu conductor, TSVs with diameter of 9 μm and depth of 141 μm are successfully fabricated, and the aspect ratio is 15.5. The TSVs are fully filled without cracks or voids, proving the good quality of seed layers. Electrical measurements show that the minimum capacitance of a single TSV is around 145 fF, and the leakage current is about 3.4 pA at 20 V, indicating good electrical properties of the fabricated TSVs and the feasibility of the proposed fabrication flow in deep HAR TSV applications.

源语言英语
页(从-至)1520-1523
页数4
期刊IEEE Electron Device Letters
42
10
DOI
出版状态已出版 - 10月 2021

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Zhang, Z., Ding, Y., Xiao, L., Cai, Z., Yang, B., Chen, Z., & Xie, H. (2021). Enabling continuous Cu seed layer for deep through-silicon-vias with high aspect ratio by sequential sputtering and electroless plating. IEEE Electron Device Letters, 42(10), 1520-1523. https://doi.org/10.1109/LED.2021.3105667