摘要
We report the characterization of self-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩcm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 0.1 Bohr magneton per iron atom for these FeSi2 NWs.
源语言 | 英语 |
---|---|
页(从-至) | 4113-4116 |
页数 | 4 |
期刊 | Chinese Physics Letters |
卷 | 25 |
期 | 11 |
DOI | |
出版状态 | 已出版 - 1 11月 2008 |