Electrical and magnetic properties of FeSi2 nanowires

Zu Lin Peng; S. Liang

doi:10.1088/0256-307X/25/11/075

Electrical and magnetic properties of FeSi₂ nanowires

Zu Lin Peng^*, S. Liang

^*Corresponding author for this work

School of Physics

Arizona State University

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report the characterization of self-assembled epitaxially grown FeSi₂ nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩcm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 0.1 Bohr magneton per iron atom for these FeSi₂ NWs.

Original language	English
Pages (from-to)	4113-4116
Number of pages	4
Journal	Chinese Physics Letters
Volume	25
Issue number	11
DOIs	https://doi.org/10.1088/0256-307X/25/11/075
Publication status	Published - 1 Nov 2008

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title = "Electrical and magnetic properties of FeSi2 nanowires",

abstract = "We report the characterization of self-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩcm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 0.1 Bohr magneton per iron atom for these FeSi2 NWs.",

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AU - Peng, Zu Lin

AU - Liang, S.

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N2 - We report the characterization of self-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩcm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 0.1 Bohr magneton per iron atom for these FeSi2 NWs.

AB - We report the characterization of self-assembled epitaxially grown FeSi2 nanowires (NWs) in terms of electrical and magnetic properties. NWs grown by reactive deposition epitaxy (RDE) on silicon (110) show dimensions of 10nm × 5nm, and several micrometres in length. By using conductive-AFM (c-AFM), electron transport properties of one single NW is measured, resistivity of a single crystalline FeSi'2 NW is estimated to be 225 μΩcm. Using superconducting quantum interference device (SQUID), we measure a magnetic moment of 0.3 0.1 Bohr magneton per iron atom for these FeSi2 NWs.

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Electrical and magnetic properties of FeSi₂ nanowires

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