Effects of SiO2 buffer layer on the characteristics of flexible ITO films

Zhinong Yu; Longfeng Xiang; Yuqiong Li; Wei Xue

Effects of SiO₂ buffer layer on the characteristics of flexible ITO films

Zhinong Yu^*, Longfeng Xiang, Yuqiong Li, Wei Xue

^*此作品的通讯作者

光电学院

Beijing Institute of Technology

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition(IBAD), and the effects of SiO₂ buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction (XRD), UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO₂ interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21 × 10^-3 Ω·cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability.

源语言	英语
页（从-至）	443-446
页数	4
期刊	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
卷	38
期	3
出版状态	已出版 - 3月 2009

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Yu, Z., Xiang, L., Li, Y., & Xue, W. (2009). Effects of SiO₂ buffer layer on the characteristics of flexible ITO films. Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering, 38(3), 443-446.

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title = "Effects of SiO2 buffer layer on the characteristics of flexible ITO films",

abstract = "The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition(IBAD), and the effects of SiO2 buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction (XRD), UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO2 interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21 × 10-3 Ω·cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability.",

keywords = "ITO film, Ion beam assisted deposition, SiO buffer layer",

author = "Zhinong Yu and Longfeng Xiang and Yuqiong Li and Wei Xue",

year = "2009",

month = mar,

language = "English",

volume = "38",

pages = "443--446",

journal = "Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering",

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T1 - Effects of SiO2 buffer layer on the characteristics of flexible ITO films

AU - Yu, Zhinong

AU - Xiang, Longfeng

AU - Li, Yuqiong

AU - Xue, Wei

PY - 2009/3

Y1 - 2009/3

N2 - The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition(IBAD), and the effects of SiO2 buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction (XRD), UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO2 interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21 × 10-3 Ω·cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability.

AB - The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition(IBAD), and the effects of SiO2 buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction (XRD), UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO2 interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21 × 10-3 Ω·cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability.

KW - ITO film

KW - Ion beam assisted deposition

KW - SiO buffer layer

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M3 - Article

AN - SCOPUS:65549108286

SN - 1002-185X

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EP - 446

JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - 3

ER -

Effects of SiO2 buffer layer on the characteristics of flexible ITO films

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Effects of SiO₂ buffer layer on the characteristics of flexible ITO films