Effects of SiO2 buffer layer on the characteristics of flexible ITO films

Zhinong Yu; Longfeng Xiang; Yuqiong Li; Wei Xue

Effects of SiO₂ buffer layer on the characteristics of flexible ITO films

Zhinong Yu^*, Longfeng Xiang, Yuqiong Li, Wei Xue

^*Corresponding author for this work

School of Optics and Photonics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition(IBAD), and the effects of SiO₂ buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction (XRD), UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO₂ interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21 × 10^-3 Ω·cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability.

Original language	English
Pages (from-to)	443-446
Number of pages	4
Journal	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume	38
Issue number	3
Publication status	Published - Mar 2009

Keywords

ITO film
Ion beam assisted deposition
SiO buffer layer

Cite this

@article{ff36d87b71cf48aab8433680675ef94d,

title = "Effects of SiO2 buffer layer on the characteristics of flexible ITO films",

abstract = "The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition(IBAD), and the effects of SiO2 buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction (XRD), UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO2 interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21 × 10-3 Ω·cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability.",

keywords = "ITO film, Ion beam assisted deposition, SiO buffer layer",

author = "Zhinong Yu and Longfeng Xiang and Yuqiong Li and Wei Xue",

year = "2009",

month = mar,

language = "English",

volume = "38",

pages = "443--446",

journal = "Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering",

issn = "1002-185X",

publisher = "Science China Press",

number = "3",

}

TY - JOUR

T1 - Effects of SiO2 buffer layer on the characteristics of flexible ITO films

AU - Yu, Zhinong

AU - Xiang, Longfeng

AU - Li, Yuqiong

AU - Xue, Wei

PY - 2009/3

Y1 - 2009/3

N2 - The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition(IBAD), and the effects of SiO2 buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction (XRD), UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO2 interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21 × 10-3 Ω·cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability.

AB - The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition(IBAD), and the effects of SiO2 buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction (XRD), UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO2 interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21 × 10-3 Ω·cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability.

KW - ITO film

KW - Ion beam assisted deposition

KW - SiO buffer layer

UR - http://www.scopus.com/inward/record.url?scp=65549108286&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:65549108286

SN - 1002-185X

VL - 38

SP - 443

EP - 446

JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - 3

ER -

Effects of SiO₂ buffer layer on the characteristics of flexible ITO films

Abstract

Keywords

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