摘要
Discusses the failure and factors of dependence of the conductivity of flexible ITO films under bending behaviors, as well as the effects of inorganic buffer layers, as SiO2 and TiO2, on the bending properties. The results and analysis show that the mismatch parameters, the adhesion and the defects are three main factors affecting the bending properties. The SiO2 or TiO2 buffer layer can decrease the critical radius of ITO thin films in inward-bending; and the TiO2 buffer layer can improve the times of bending of ITO thin films.
| 源语言 | 英语 |
|---|---|
| 页（从-至） | 699-703 |
| 页数 | 5 |
| 期刊 | Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology |
| 卷 | 29 |
| 期 | 8 |
| 出版状态 | 已出版 - 8月 2009 |
指纹
探究 'Effect of SiO2 and TiO2 buffer layers to the bending properties of flexible ITO film' 的科研主题。它们共同构成独一无二的指纹。引用此
Yu, Z. N., Xia, F., Li, Y. Q., Xue, W., & Zhao, Z. W. (2009). Effect of SiO2 and TiO2 buffer layers to the bending properties of flexible ITO film. Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology, 29(8), 699-703.