Effect of SiO2 and TiO2 buffer layers to the bending properties of flexible ITO film

Zhi Nong Yu; Fan Xia; Yu Qiong Li; Wei Xue; Zhi Wei Zhao

Effect of SiO₂ and TiO₂ buffer layers to the bending properties of flexible ITO film

Zhi Nong Yu^*, Fan Xia, Yu Qiong Li, Wei Xue, Zhi Wei Zhao

^*Corresponding author for this work

School of Optics and Photonics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Discusses the failure and factors of dependence of the conductivity of flexible ITO films under bending behaviors, as well as the effects of inorganic buffer layers, as SiO₂ and TiO₂, on the bending properties. The results and analysis show that the mismatch parameters, the adhesion and the defects are three main factors affecting the bending properties. The SiO₂ or TiO₂ buffer layer can decrease the critical radius of ITO thin films in inward-bending; and the TiO₂ buffer layer can improve the times of bending of ITO thin films.

Original language	English
Pages (from-to)	699-703
Number of pages	5
Journal	Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
Volume	29
Issue number	8
Publication status	Published - Aug 2009

Keywords

Bending properties
Buffer layer
Flexible ITO

Cite this

@article{8508830c0b0743d8a3488f8d6b040dda,

title = "Effect of SiO2 and TiO2 buffer layers to the bending properties of flexible ITO film",

abstract = "Discusses the failure and factors of dependence of the conductivity of flexible ITO films under bending behaviors, as well as the effects of inorganic buffer layers, as SiO2 and TiO2, on the bending properties. The results and analysis show that the mismatch parameters, the adhesion and the defects are three main factors affecting the bending properties. The SiO2 or TiO2 buffer layer can decrease the critical radius of ITO thin films in inward-bending; and the TiO2 buffer layer can improve the times of bending of ITO thin films.",

keywords = "Bending properties, Buffer layer, Flexible ITO",

author = "Yu, {Zhi Nong} and Fan Xia and Li, {Yu Qiong} and Wei Xue and Zhao, {Zhi Wei}",

year = "2009",

month = aug,

language = "English",

volume = "29",

pages = "699--703",

journal = "Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology",

issn = "1001-0645",

publisher = "Beijing Institute of Technology",

number = "8",

}

TY - JOUR

T1 - Effect of SiO2 and TiO2 buffer layers to the bending properties of flexible ITO film

AU - Yu, Zhi Nong

AU - Xia, Fan

AU - Li, Yu Qiong

AU - Xue, Wei

AU - Zhao, Zhi Wei

PY - 2009/8

Y1 - 2009/8

N2 - Discusses the failure and factors of dependence of the conductivity of flexible ITO films under bending behaviors, as well as the effects of inorganic buffer layers, as SiO2 and TiO2, on the bending properties. The results and analysis show that the mismatch parameters, the adhesion and the defects are three main factors affecting the bending properties. The SiO2 or TiO2 buffer layer can decrease the critical radius of ITO thin films in inward-bending; and the TiO2 buffer layer can improve the times of bending of ITO thin films.

AB - Discusses the failure and factors of dependence of the conductivity of flexible ITO films under bending behaviors, as well as the effects of inorganic buffer layers, as SiO2 and TiO2, on the bending properties. The results and analysis show that the mismatch parameters, the adhesion and the defects are three main factors affecting the bending properties. The SiO2 or TiO2 buffer layer can decrease the critical radius of ITO thin films in inward-bending; and the TiO2 buffer layer can improve the times of bending of ITO thin films.

KW - Bending properties

KW - Buffer layer

KW - Flexible ITO

UR - http://www.scopus.com/inward/record.url?scp=70349996008&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:70349996008

SN - 1001-0645

VL - 29

SP - 699

EP - 703

JO - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

JF - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

IS - 8

ER -

Effect of SiO₂ and TiO₂ buffer layers to the bending properties of flexible ITO film

Abstract

Keywords

Other files and links

Fingerprint

Cite this