Wang, P., Zhao, Y., Na, R., Dong, W., Duan, J., Cheng, Y., Xu, B., Kong, D., Liu, J., Du, S., Zhao, C., Yang, Y., Lv, L., Hu, Q., Ai, H., Xiong, Y., Stolyarov, V. S., Zheng, S., Zhou, Y., ... Zhou, J. (2024). Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2. Advanced Materials, 36(23), 文章 2400655. https://doi.org/10.1002/adma.202400655
Wang, Ping ; Zhao, Yang ; Na, Rui 等. / Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2. 在: Advanced Materials. 2024 ; 卷 36, 号码 23.
@article{29d6674b072d459588a0c0ec453c39a5,
title = "Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2",
abstract = "Ultrathin 2D ferroelectrics with high Curie temperature are critical for multifunctional ferroelectric devices. However, the ferroelectric spontaneous polarization is consistently broken by the strong thermal fluctuations at high temperature, resulting in the rare discovery of high-temperature ferroelectricity in 2D materials. Here, a chemical vapor deposition method is reported to synthesize 2D CuCrSe2 nanosheets. The crystal structure is confirmed by scanning transmission electron microscopy characterization. The measured ferroelectric phase transition temperature of ultrathin CuCrSe2 is about ≈800 K. Significantly, the switchable ferroelectric polarization is observed in ≈5.2 nm nanosheet. Moreover, the in-plane and out-of-plane ferroelectric response are modulated by different maximum bias voltage. This work provides a new insight into the construction of 2D ferroelectrics with high Curie temperature.",
keywords = "2D materials, CuCrSe, chemical vapor deposition, ferroelectricity, high Curie temperature",
author = "Ping Wang and Yang Zhao and Rui Na and Weikang Dong and Jingyi Duan and Yue Cheng and Boyu Xu and Denan Kong and Jijian Liu and Shuang Du and Chunyu Zhao and Yang Yang and Lu Lv and Qingmei Hu and Hui Ai and Yan Xiong and Stolyarov, {Vasily S.} and Shoujun Zheng and Yao Zhou and Fang Deng and Jiadong Zhou",
note = "Publisher Copyright: {\textcopyright} 2024 Wiley-VCH GmbH.",
year = "2024",
month = jun,
day = "6",
doi = "10.1002/adma.202400655",
language = "English",
volume = "36",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-Blackwell",
number = "23",
}
Wang, P, Zhao, Y, Na, R, Dong, W, Duan, J, Cheng, Y, Xu, B, Kong, D, Liu, J, Du, S, Zhao, C, Yang, Y, Lv, L, Hu, Q, Ai, H, Xiong, Y, Stolyarov, VS, Zheng, S, Zhou, Y, Deng, F & Zhou, J 2024, 'Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2', Advanced Materials, 卷 36, 号码 23, 2400655. https://doi.org/10.1002/adma.202400655
Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2. / Wang, Ping; Zhao, Yang; Na, Rui 等.
在:
Advanced Materials, 卷 36, 号码 23, 2400655, 06.06.2024.
科研成果: 期刊稿件 › 文章 › 同行评审
TY - JOUR
T1 - Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2
AU - Wang, Ping
AU - Zhao, Yang
AU - Na, Rui
AU - Dong, Weikang
AU - Duan, Jingyi
AU - Cheng, Yue
AU - Xu, Boyu
AU - Kong, Denan
AU - Liu, Jijian
AU - Du, Shuang
AU - Zhao, Chunyu
AU - Yang, Yang
AU - Lv, Lu
AU - Hu, Qingmei
AU - Ai, Hui
AU - Xiong, Yan
AU - Stolyarov, Vasily S.
AU - Zheng, Shoujun
AU - Zhou, Yao
AU - Deng, Fang
AU - Zhou, Jiadong
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2024/6/6
Y1 - 2024/6/6
N2 - Ultrathin 2D ferroelectrics with high Curie temperature are critical for multifunctional ferroelectric devices. However, the ferroelectric spontaneous polarization is consistently broken by the strong thermal fluctuations at high temperature, resulting in the rare discovery of high-temperature ferroelectricity in 2D materials. Here, a chemical vapor deposition method is reported to synthesize 2D CuCrSe2 nanosheets. The crystal structure is confirmed by scanning transmission electron microscopy characterization. The measured ferroelectric phase transition temperature of ultrathin CuCrSe2 is about ≈800 K. Significantly, the switchable ferroelectric polarization is observed in ≈5.2 nm nanosheet. Moreover, the in-plane and out-of-plane ferroelectric response are modulated by different maximum bias voltage. This work provides a new insight into the construction of 2D ferroelectrics with high Curie temperature.
AB - Ultrathin 2D ferroelectrics with high Curie temperature are critical for multifunctional ferroelectric devices. However, the ferroelectric spontaneous polarization is consistently broken by the strong thermal fluctuations at high temperature, resulting in the rare discovery of high-temperature ferroelectricity in 2D materials. Here, a chemical vapor deposition method is reported to synthesize 2D CuCrSe2 nanosheets. The crystal structure is confirmed by scanning transmission electron microscopy characterization. The measured ferroelectric phase transition temperature of ultrathin CuCrSe2 is about ≈800 K. Significantly, the switchable ferroelectric polarization is observed in ≈5.2 nm nanosheet. Moreover, the in-plane and out-of-plane ferroelectric response are modulated by different maximum bias voltage. This work provides a new insight into the construction of 2D ferroelectrics with high Curie temperature.
KW - 2D materials
KW - CuCrSe
KW - chemical vapor deposition
KW - ferroelectricity
KW - high Curie temperature
UR - http://www.scopus.com/inward/record.url?scp=85185948080&partnerID=8YFLogxK
U2 - 10.1002/adma.202400655
DO - 10.1002/adma.202400655
M3 - Article
AN - SCOPUS:85185948080
SN - 0935-9648
VL - 36
JO - Advanced Materials
JF - Advanced Materials
IS - 23
M1 - 2400655
ER -
Wang P, Zhao Y, Na R, Dong W, Duan J, Cheng Y 等. Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2. Advanced Materials. 2024 6月 6;36(23):2400655. doi: 10.1002/adma.202400655