Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2

Ping Wang, Yang Zhao, Rui Na, Weikang Dong, Jingyi Duan, Yue Cheng, Boyu Xu, Denan Kong, Jijian Liu, Shuang Du, Chunyu Zhao, Yang Yang, Lu Lv, Qingmei Hu, Hui Ai, Yan Xiong, Vasily S. Stolyarov, Shoujun Zheng, Yao Zhou, Fang DengJiadong Zhou*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

11 引用 (Scopus)

摘要

Ultrathin 2D ferroelectrics with high Curie temperature are critical for multifunctional ferroelectric devices. However, the ferroelectric spontaneous polarization is consistently broken by the strong thermal fluctuations at high temperature, resulting in the rare discovery of high-temperature ferroelectricity in 2D materials. Here, a chemical vapor deposition method is reported to synthesize 2D CuCrSe2 nanosheets. The crystal structure is confirmed by scanning transmission electron microscopy characterization. The measured ferroelectric phase transition temperature of ultrathin CuCrSe2 is about ≈800 K. Significantly, the switchable ferroelectric polarization is observed in ≈5.2 nm nanosheet. Moreover, the in-plane and out-of-plane ferroelectric response are modulated by different maximum bias voltage. This work provides a new insight into the construction of 2D ferroelectrics with high Curie temperature.

源语言英语
文章编号2400655
期刊Advanced Materials
36
23
DOI
出版状态已出版 - 6 6月 2024

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Wang, P., Zhao, Y., Na, R., Dong, W., Duan, J., Cheng, Y., Xu, B., Kong, D., Liu, J., Du, S., Zhao, C., Yang, Y., Lv, L., Hu, Q., Ai, H., Xiong, Y., Stolyarov, V. S., Zheng, S., Zhou, Y., ... Zhou, J. (2024). Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2. Advanced Materials, 36(23), 文章 2400655. https://doi.org/10.1002/adma.202400655