@inproceedings{6ebbc61d1286492fb32acb185074a0fd,
title = "Carrier-mobility improvement for pentacene OTFT with LaZrO dielectric by using Pd gate",
abstract = "Pentacene organic thin-film transistor (OTFT) using Pd as gate electrode is proposed, with high-k LaZrO as gate dielectric. The Pd film is prepared by e-beam evaporation and then the LaZrO film is deposited by reactive sputtering in Ar/O2 ambience followed by an annealing in N2 at 400 °C. The OTFT achieves an obvious increase in carrier mobility (to 1.02 cm2/V·s), as compared with its counterpart with heavily-doped silicon gate (0.23 cm2/V·s). Moreover, both samples with LaZrO gate dielectric show higher carrier mobility than a sample with La2O3 gate dielectric and Pd gate electrode.",
keywords = "High-k dieletric, Metal gate, Organic thin-film transistor",
author = "Ma, {Yuan Xiao} and Han, {Chuan Yu} and Lai, {P. T.}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 ; Conference date: 25-10-2016 Through 28-10-2016",
year = "2016",
doi = "10.1109/ICSICT.2016.7998623",
language = "English",
series = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "974--977",
editor = "Yu-Long Jiang and Ting-Ao Tang and Ru Huang",
booktitle = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
address = "United States",
}