摘要
One-dimensional nanostructures of direct-forbidden semiconductor SnO 2 crystallite have been prepared in large scale via thermal evaporation of tin monoxide at 1100 °C. The anomalous optical emission even lasing phenomena are observed below the band edge under pulsed laser excitation, which usually does not occur for a direct-forbidden band semiconductor. Scanning electron microscopy, X-ray powder diffraction, transmission electron microscopy, UV-vis reflectance spectroscopy, and Raman scattering spectra were used to characterize the as-synthesized products. The processes of multiphonon coupling with exciton dominate in the exciton transition and lasing. The enhancement of exciton-phonon coupling and bound exciton transition could be mapped in the phonon scattering process. The origin of photoluminescence and lasing of SnO2 nanobelts and nanowires was illustrated.
源语言 | 英语 |
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页(从-至) | 1719-1726 |
页数 | 8 |
期刊 | Journal of Physical Chemistry C |
卷 | 113 |
期 | 5 |
DOI | |
出版状态 | 已出版 - 5 2月 2009 |
已对外发布 | 是 |