Abstract
One-dimensional nanostructures of direct-forbidden semiconductor SnO 2 crystallite have been prepared in large scale via thermal evaporation of tin monoxide at 1100 °C. The anomalous optical emission even lasing phenomena are observed below the band edge under pulsed laser excitation, which usually does not occur for a direct-forbidden band semiconductor. Scanning electron microscopy, X-ray powder diffraction, transmission electron microscopy, UV-vis reflectance spectroscopy, and Raman scattering spectra were used to characterize the as-synthesized products. The processes of multiphonon coupling with exciton dominate in the exciton transition and lasing. The enhancement of exciton-phonon coupling and bound exciton transition could be mapped in the phonon scattering process. The origin of photoluminescence and lasing of SnO2 nanobelts and nanowires was illustrated.
Original language | English |
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Pages (from-to) | 1719-1726 |
Number of pages | 8 |
Journal | Journal of Physical Chemistry C |
Volume | 113 |
Issue number | 5 |
DOIs | |
Publication status | Published - 5 Feb 2009 |
Externally published | Yes |