A Full W-Band InP LNA With Enhanced Gain Flatness

Yutong Wang; Bo Li; Feng Lin; Houjun Sun; Hongjiang Wu; Chunliang Xu; Yuan Fang; Zhiqiang Li

doi:10.1109/TCSII.2024.3378535

A Full W-Band InP LNA With Enhanced Gain Flatness

Yutong Wang, Bo Li, Feng Lin^*, Houjun Sun, Hongjiang Wu, Chunliang Xu, Yuan Fang, Zhiqiang Li

^*此作品的通讯作者

集成电路与电子学院

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

This brief presents a full W-band low noise amplifier (LNA) based on Indium Phosphide (InP) high electron mobility transistor (HEMT) technology. It utilizes a four-stage common source structure, and source inductances of different stages are designed carefully to achieve bandwidth extension and lower noise figure (NF). To realize enhanced gain flatness during the full W band, the four stages are designed with different gain peaking frequencies. From 75 to 110 GHz, the measured gain is 22.5-24.6 dB with gain variation of less than 2.1 dB, and the measured NF is 2-3.4 dB. The measured P_1dB are -21, -21, and -20 dBm at 80, 92 and 105 GHz, respectively.

源语言	英语
页（从-至）	4106-4110
页数	5
期刊	IEEE Transactions on Circuits and Systems II: Express Briefs
卷	71
期	9
DOI	https://doi.org/10.1109/TCSII.2024.3378535
出版状态	已出版 - 2024

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10.1109/TCSII.2024.3378535

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title = "A Full W-Band InP LNA With Enhanced Gain Flatness",

abstract = "This brief presents a full W-band low noise amplifier (LNA) based on Indium Phosphide (InP) high electron mobility transistor (HEMT) technology. It utilizes a four-stage common source structure, and source inductances of different stages are designed carefully to achieve bandwidth extension and lower noise figure (NF). To realize enhanced gain flatness during the full W band, the four stages are designed with different gain peaking frequencies. From 75 to 110 GHz, the measured gain is 22.5-24.6 dB with gain variation of less than 2.1 dB, and the measured NF is 2-3.4 dB. The measured P1dB are -21, -21, and -20 dBm at 80, 92 and 105 GHz, respectively.",

keywords = "Broadband, Indium Phosphide, W-band, high electron mobility transistor, low-noise amplifier",

author = "Yutong Wang and Bo Li and Feng Lin and Houjun Sun and Hongjiang Wu and Chunliang Xu and Yuan Fang and Zhiqiang Li",

note = "Publisher Copyright: {\textcopyright} 2004-2012 IEEE.",

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doi = "10.1109/TCSII.2024.3378535",

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T1 - A Full W-Band InP LNA With Enhanced Gain Flatness

AU - Wang, Yutong

AU - Li, Bo

AU - Lin, Feng

AU - Sun, Houjun

AU - Wu, Hongjiang

AU - Xu, Chunliang

AU - Fang, Yuan

AU - Li, Zhiqiang

PY - 2024

Y1 - 2024

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AB - This brief presents a full W-band low noise amplifier (LNA) based on Indium Phosphide (InP) high electron mobility transistor (HEMT) technology. It utilizes a four-stage common source structure, and source inductances of different stages are designed carefully to achieve bandwidth extension and lower noise figure (NF). To realize enhanced gain flatness during the full W band, the four stages are designed with different gain peaking frequencies. From 75 to 110 GHz, the measured gain is 22.5-24.6 dB with gain variation of less than 2.1 dB, and the measured NF is 2-3.4 dB. The measured P1dB are -21, -21, and -20 dBm at 80, 92 and 105 GHz, respectively.

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KW - W-band

KW - high electron mobility transistor

KW - low-noise amplifier

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A Full W-Band InP LNA With Enhanced Gain Flatness

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