A Full W-Band InP LNA With Enhanced Gain Flatness

Yutong Wang; Bo Li; Feng Lin; Houjun Sun; Hongjiang Wu; Chunliang Xu; Yuan Fang; Zhiqiang Li

doi:10.1109/TCSII.2024.3378535

A Full W-Band InP LNA With Enhanced Gain Flatness

Yutong Wang, Bo Li, Feng Lin^*, Houjun Sun, Hongjiang Wu, Chunliang Xu, Yuan Fang, Zhiqiang Li

^*Corresponding author for this work

School of Integrated Circuits and Electronics

Research output: Contribution to journal › Article › peer-review

Abstract

This brief presents a full W-band low noise amplifier (LNA) based on Indium Phosphide (InP) high electron mobility transistor (HEMT) technology. It utilizes a four-stage common source structure, and source inductances of different stages are designed carefully to achieve bandwidth extension and lower noise figure (NF). To realize enhanced gain flatness during the full W band, the four stages are designed with different gain peaking frequencies. From 75 to 110 GHz, the measured gain is 22.5-24.6 dB with gain variation of less than 2.1 dB, and the measured NF is 2-3.4 dB. The measured P_1dB are -21, -21, and -20 dBm at 80, 92 and 105 GHz, respectively.

Original language	English
Pages (from-to)	4106-4110
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	71
Issue number	9
DOIs	https://doi.org/10.1109/TCSII.2024.3378535
Publication status	Published - 2024

Keywords

Broadband
Indium Phosphide
W-band
high electron mobility transistor
low-noise amplifier

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10.1109/TCSII.2024.3378535

Cite this

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title = "A Full W-Band InP LNA With Enhanced Gain Flatness",

abstract = "This brief presents a full W-band low noise amplifier (LNA) based on Indium Phosphide (InP) high electron mobility transistor (HEMT) technology. It utilizes a four-stage common source structure, and source inductances of different stages are designed carefully to achieve bandwidth extension and lower noise figure (NF). To realize enhanced gain flatness during the full W band, the four stages are designed with different gain peaking frequencies. From 75 to 110 GHz, the measured gain is 22.5-24.6 dB with gain variation of less than 2.1 dB, and the measured NF is 2-3.4 dB. The measured P1dB are -21, -21, and -20 dBm at 80, 92 and 105 GHz, respectively.",

keywords = "Broadband, Indium Phosphide, W-band, high electron mobility transistor, low-noise amplifier",

author = "Yutong Wang and Bo Li and Feng Lin and Houjun Sun and Hongjiang Wu and Chunliang Xu and Yuan Fang and Zhiqiang Li",

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AU - Wang, Yutong

AU - Li, Bo

AU - Lin, Feng

AU - Sun, Houjun

AU - Wu, Hongjiang

AU - Xu, Chunliang

AU - Fang, Yuan

AU - Li, Zhiqiang

PY - 2024

Y1 - 2024

N2 - This brief presents a full W-band low noise amplifier (LNA) based on Indium Phosphide (InP) high electron mobility transistor (HEMT) technology. It utilizes a four-stage common source structure, and source inductances of different stages are designed carefully to achieve bandwidth extension and lower noise figure (NF). To realize enhanced gain flatness during the full W band, the four stages are designed with different gain peaking frequencies. From 75 to 110 GHz, the measured gain is 22.5-24.6 dB with gain variation of less than 2.1 dB, and the measured NF is 2-3.4 dB. The measured P1dB are -21, -21, and -20 dBm at 80, 92 and 105 GHz, respectively.

AB - This brief presents a full W-band low noise amplifier (LNA) based on Indium Phosphide (InP) high electron mobility transistor (HEMT) technology. It utilizes a four-stage common source structure, and source inductances of different stages are designed carefully to achieve bandwidth extension and lower noise figure (NF). To realize enhanced gain flatness during the full W band, the four stages are designed with different gain peaking frequencies. From 75 to 110 GHz, the measured gain is 22.5-24.6 dB with gain variation of less than 2.1 dB, and the measured NF is 2-3.4 dB. The measured P1dB are -21, -21, and -20 dBm at 80, 92 and 105 GHz, respectively.

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A Full W-Band InP LNA With Enhanced Gain Flatness

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