3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials

Dongyan Jia; Shanjia Xu; Xinqing Sheng

doi:10.1109/ICCEA.1999.825130

3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials

Dongyan Jia, Shanjia Xu, Xinqing Sheng

University of Science and Technology of China

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

摘要

Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.

源语言	英语
主期刊名	1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings
编辑	Gao Benqing, Lu Xiaode
出版商	Institute of Electrical and Electronics Engineers Inc.
页	302-306
页数	5
ISBN（印刷版）	0780358023, 9780780358027
DOI	https://doi.org/10.1109/ICCEA.1999.825130
出版状态	已出版 - 1999
已对外发布	是
活动	1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Beijing, 中国期限: 4 11月 1999 → 4 11月 1999

出版系列

姓名	1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings

会议

会议	1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999
国家/地区	中国
市	Beijing
时期	4/11/99 → 4/11/99

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10.1109/ICCEA.1999.825130

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引用此

Jia, D., Xu, S., & Sheng, X. (1999). 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials. 在 G. Benqing, & L. Xiaode (编辑), 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings (页码 302-306). 文章 00825130 (1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCEA.1999.825130

Jia, Dongyan ; Xu, Shanjia ; Sheng, Xinqing. / 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials. 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings. 编辑 / Gao Benqing ; Lu Xiaode. Institute of Electrical and Electronics Engineers Inc., 1999. 页码 302-306 (1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings).

@inproceedings{fc3cd32a3ce442b6bd6e4664257f4b0b,

title = "3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials",

abstract = "Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.",

author = "Dongyan Jia and Shanjia Xu and Xinqing Sheng",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 ; Conference date: 04-11-1999 Through 04-11-1999",

year = "1999",

doi = "10.1109/ICCEA.1999.825130",

language = "English",

isbn = "0780358023",

series = "1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "302--306",

editor = "Gao Benqing and Lu Xiaode",

booktitle = "1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings",

address = "United States",

}

Jia, D, Xu, S & Sheng, X 1999, 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials. 在 G Benqing & L Xiaode (编辑), 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings., 00825130, 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 页码 302-306, 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999, Beijing, 中国, 4/11/99. https://doi.org/10.1109/ICCEA.1999.825130

3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials. / Jia, Dongyan; Xu, Shanjia; Sheng, Xinqing.
1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings. 编辑 / Gao Benqing; Lu Xiaode. Institute of Electrical and Electronics Engineers Inc., 1999. 页码 302-306 00825130 (1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials

AU - Jia, Dongyan

AU - Xu, Shanjia

AU - Sheng, Xinqing

PY - 1999

Y1 - 1999

N2 - Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.

AB - Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.

UR - http://www.scopus.com/inward/record.url?scp=85054207292&partnerID=8YFLogxK

U2 - 10.1109/ICCEA.1999.825130

DO - 10.1109/ICCEA.1999.825130

M3 - Conference contribution

AN - SCOPUS:85054207292

SN - 0780358023

SN - 9780780358027

T3 - 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings

SP - 302

EP - 306

BT - 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings

A2 - Benqing, Gao

A2 - Xiaode, Lu

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999

Y2 - 4 November 1999 through 4 November 1999

ER -

Jia D, Xu S, Sheng X. 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials. 在 Benqing G, Xiaode L, 编辑, 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 1999. 页码 302-306. 00825130. (1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings). doi: 10.1109/ICCEA.1999.825130

3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials

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