3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials

Dongyan Jia; Shanjia Xu; Xinqing Sheng

doi:10.1109/ICCEA.1999.825130

3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials

Dongyan Jia, Shanjia Xu, Xinqing Sheng

University of Science and Technology of China

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.

Original language	English
Title of host publication	1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings
Editors	Gao Benqing, Lu Xiaode
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	302-306
Number of pages	5
ISBN (Print)	0780358023, 9780780358027
DOIs	https://doi.org/10.1109/ICCEA.1999.825130
Publication status	Published - 1999
Externally published	Yes
Event	1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Beijing, China Duration: 4 Nov 1999 → 4 Nov 1999

Publication series

Name	1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings

Conference

Conference	1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999
Country/Territory	China
City	Beijing
Period	4/11/99 → 4/11/99

Access to Document

10.1109/ICCEA.1999.825130

Cite this

Jia, D., Xu, S., & Sheng, X. (1999). 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials. In G. Benqing, & L. Xiaode (Eds.), 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings (pp. 302-306). Article 00825130 (1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCEA.1999.825130

Jia, Dongyan ; Xu, Shanjia ; Sheng, Xinqing. / 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials. 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings. editor / Gao Benqing ; Lu Xiaode. Institute of Electrical and Electronics Engineers Inc., 1999. pp. 302-306 (1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings).

@inproceedings{fc3cd32a3ce442b6bd6e4664257f4b0b,

title = "3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials",

abstract = "Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.",

author = "Dongyan Jia and Shanjia Xu and Xinqing Sheng",

note = "Publisher Copyright: {\textcopyright} 1999 IEEE.; 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 ; Conference date: 04-11-1999 Through 04-11-1999",

year = "1999",

doi = "10.1109/ICCEA.1999.825130",

language = "English",

isbn = "0780358023",

series = "1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "302--306",

editor = "Gao Benqing and Lu Xiaode",

booktitle = "1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings",

address = "United States",

}

Jia, D, Xu, S & Sheng, X 1999, 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials. in G Benqing & L Xiaode (eds), 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings., 00825130, 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 302-306, 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999, Beijing, China, 4/11/99. https://doi.org/10.1109/ICCEA.1999.825130

3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials. / Jia, Dongyan; Xu, Shanjia; Sheng, Xinqing.
1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings. ed. / Gao Benqing; Lu Xiaode. Institute of Electrical and Electronics Engineers Inc., 1999. p. 302-306 00825130 (1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials

AU - Jia, Dongyan

AU - Xu, Shanjia

AU - Sheng, Xinqing

PY - 1999

Y1 - 1999

N2 - Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.

AB - Scattering characteristics of II-VI semiconductor materials with tensor conductivity resulting of the Hall-effect filled in waveguide with gaps are analyzed with the 3-D edge-element method. This method avoids the difficulty of solving the eigenvalue problem for lossy anisotropic dielectric loaded waveguide. Some useful curves are given and the procedure of determining mobility and carrier concentration of II-VI semiconductor materials with these curves is described. The experiment results confirm the effectiveness, reliability and accuracy of the present approach.

UR - http://www.scopus.com/inward/record.url?scp=85054207292&partnerID=8YFLogxK

U2 - 10.1109/ICCEA.1999.825130

DO - 10.1109/ICCEA.1999.825130

M3 - Conference contribution

AN - SCOPUS:85054207292

SN - 0780358023

SN - 9780780358027

T3 - 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings

SP - 302

EP - 306

BT - 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings

A2 - Benqing, Gao

A2 - Xiaode, Lu

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999

Y2 - 4 November 1999 through 4 November 1999

ER -

Jia D, Xu S, Sheng X. 3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials. In Benqing G, Xiaode L, editors, 1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 1999. p. 302-306. 00825130. (1999 International Conference on Computational Electromagnetics and its Applications. ICCEA 1999 - Proceedings). doi: 10.1109/ICCEA.1999.825130

3-D edge-element analysis of characteristic parameters for II-VI semiconductor materials

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