包含Kink效应的改进型GaN HEMTs模型

Yan Fei Hou; Yi Jing Liu; Hao Li; Wei He; Yuan Jie Lü; Jun Liu; Song Yuan Yang; Bo Wu Wang; Wei Hua Yu

doi:10.15918/j.tbit1001-0645.2019.119

包含Kink效应的改进型GaN HEMTs模型

Yan Fei Hou, Yi Jing Liu, Hao Li, Wei He, Yuan Jie Lü, Jun Liu, Song Yuan Yang, Bo Wu Wang, Wei Hua Yu^*

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

An improved model for AlGaN/GaN HEMTs including Kink effect was presented in this paper. This large signal model was constructed based on the symbolically defined device (SDD) form of advanced design system (ADS). The improved I-V expression was proposed to complete nonlinear fitting accurately by contrasting the measure results of the on-wafer AlGaN/GaN HEMT with two gate fingers each being 90 nm long and 40 μm wide. The model can accurately fit the 0~110 GHz S-parameter and DC characteristics of the device. The convergence of the model is great during the harmonic balance simulation. So this modeling method can be applied to millimeter-wave GaN HEMTs.

投稿的翻译标题	An Improved Model for GaN HEMTs with Kink Effect
源语言	繁体中文
页（从-至）	1253-1258
页数	6
期刊	Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
卷	40
期	11
DOI	https://doi.org/10.15918/j.tbit1001-0645.2019.119
出版状态	已出版 - 11月 2020

关键词

AlGaN/GaN
High electron mobility transistor
Kink effect
Large signal model

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10.15918/j.tbit1001-0645.2019.119

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引用此

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title = "包含Kink效应的改进型GaN HEMTs模型",

abstract = "An improved model for AlGaN/GaN HEMTs including Kink effect was presented in this paper. This large signal model was constructed based on the symbolically defined device (SDD) form of advanced design system (ADS). The improved I-V expression was proposed to complete nonlinear fitting accurately by contrasting the measure results of the on-wafer AlGaN/GaN HEMT with two gate fingers each being 90 nm long and 40 μm wide. The model can accurately fit the 0~110 GHz S-parameter and DC characteristics of the device. The convergence of the model is great during the harmonic balance simulation. So this modeling method can be applied to millimeter-wave GaN HEMTs.",

keywords = "AlGaN/GaN, High electron mobility transistor, Kink effect, Large signal model",

author = "Hou, {Yan Fei} and Liu, {Yi Jing} and Hao Li and Wei He and L{\"u}, {Yuan Jie} and Jun Liu and Yang, {Song Yuan} and Wang, {Bo Wu} and Yu, {Wei Hua}",

year = "2020",

month = nov,

doi = "10.15918/j.tbit1001-0645.2019.119",

language = "繁体中文",

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T1 - 包含Kink效应的改进型GaN HEMTs模型

AU - Hou, Yan Fei

AU - Liu, Yi Jing

AU - Li, Hao

AU - He, Wei

AU - Lü, Yuan Jie

AU - Liu, Jun

AU - Yang, Song Yuan

AU - Wang, Bo Wu

AU - Yu, Wei Hua

PY - 2020/11

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AB - An improved model for AlGaN/GaN HEMTs including Kink effect was presented in this paper. This large signal model was constructed based on the symbolically defined device (SDD) form of advanced design system (ADS). The improved I-V expression was proposed to complete nonlinear fitting accurately by contrasting the measure results of the on-wafer AlGaN/GaN HEMT with two gate fingers each being 90 nm long and 40 μm wide. The model can accurately fit the 0~110 GHz S-parameter and DC characteristics of the device. The convergence of the model is great during the harmonic balance simulation. So this modeling method can be applied to millimeter-wave GaN HEMTs.

KW - AlGaN/GaN

KW - High electron mobility transistor

KW - Kink effect

KW - Large signal model

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JO - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

JF - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

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ER -

包含Kink效应的改进型GaN HEMTs模型

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