包含Kink效应的改进型GaN HEMTs模型

Yan Fei Hou; Yi Jing Liu; Hao Li; Wei He; Yuan Jie Lü; Jun Liu; Song Yuan Yang; Bo Wu Wang; Wei Hua Yu

doi:10.15918/j.tbit1001-0645.2019.119

包含Kink效应的改进型GaN HEMTs模型

Translated title of the contribution: An Improved Model for GaN HEMTs with Kink Effect

Yan Fei Hou, Yi Jing Liu, Hao Li, Wei He, Yuan Jie Lü, Jun Liu, Song Yuan Yang, Bo Wu Wang, Wei Hua Yu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

An improved model for AlGaN/GaN HEMTs including Kink effect was presented in this paper. This large signal model was constructed based on the symbolically defined device (SDD) form of advanced design system (ADS). The improved I-V expression was proposed to complete nonlinear fitting accurately by contrasting the measure results of the on-wafer AlGaN/GaN HEMT with two gate fingers each being 90 nm long and 40 μm wide. The model can accurately fit the 0~110 GHz S-parameter and DC characteristics of the device. The convergence of the model is great during the harmonic balance simulation. So this modeling method can be applied to millimeter-wave GaN HEMTs.

Translated title of the contribution	An Improved Model for GaN HEMTs with Kink Effect
Original language	Chinese (Traditional)
Pages (from-to)	1253-1258
Number of pages	6
Journal	Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
Volume	40
Issue number	11
DOIs	https://doi.org/10.15918/j.tbit1001-0645.2019.119
Publication status	Published - Nov 2020

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10.15918/j.tbit1001-0645.2019.119

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title = "包含Kink效应的改进型GaN HEMTs模型",

abstract = "An improved model for AlGaN/GaN HEMTs including Kink effect was presented in this paper. This large signal model was constructed based on the symbolically defined device (SDD) form of advanced design system (ADS). The improved I-V expression was proposed to complete nonlinear fitting accurately by contrasting the measure results of the on-wafer AlGaN/GaN HEMT with two gate fingers each being 90 nm long and 40 μm wide. The model can accurately fit the 0~110 GHz S-parameter and DC characteristics of the device. The convergence of the model is great during the harmonic balance simulation. So this modeling method can be applied to millimeter-wave GaN HEMTs.",

keywords = "AlGaN/GaN, High electron mobility transistor, Kink effect, Large signal model",

author = "Hou, {Yan Fei} and Liu, {Yi Jing} and Hao Li and Wei He and L{\"u}, {Yuan Jie} and Jun Liu and Yang, {Song Yuan} and Wang, {Bo Wu} and Yu, {Wei Hua}",

year = "2020",

month = nov,

doi = "10.15918/j.tbit1001-0645.2019.119",

language = "繁体中文",

volume = "40",

pages = "1253--1258",

journal = "Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology",

issn = "1001-0645",

publisher = "Beijing Institute of Technology",

number = "11",

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TY - JOUR

T1 - 包含Kink效应的改进型GaN HEMTs模型

AU - Hou, Yan Fei

AU - Liu, Yi Jing

AU - Li, Hao

AU - He, Wei

AU - Lü, Yuan Jie

AU - Liu, Jun

AU - Yang, Song Yuan

AU - Wang, Bo Wu

AU - Yu, Wei Hua

PY - 2020/11

Y1 - 2020/11

N2 - An improved model for AlGaN/GaN HEMTs including Kink effect was presented in this paper. This large signal model was constructed based on the symbolically defined device (SDD) form of advanced design system (ADS). The improved I-V expression was proposed to complete nonlinear fitting accurately by contrasting the measure results of the on-wafer AlGaN/GaN HEMT with two gate fingers each being 90 nm long and 40 μm wide. The model can accurately fit the 0~110 GHz S-parameter and DC characteristics of the device. The convergence of the model is great during the harmonic balance simulation. So this modeling method can be applied to millimeter-wave GaN HEMTs.

AB - An improved model for AlGaN/GaN HEMTs including Kink effect was presented in this paper. This large signal model was constructed based on the symbolically defined device (SDD) form of advanced design system (ADS). The improved I-V expression was proposed to complete nonlinear fitting accurately by contrasting the measure results of the on-wafer AlGaN/GaN HEMT with two gate fingers each being 90 nm long and 40 μm wide. The model can accurately fit the 0~110 GHz S-parameter and DC characteristics of the device. The convergence of the model is great during the harmonic balance simulation. So this modeling method can be applied to millimeter-wave GaN HEMTs.

KW - AlGaN/GaN

KW - High electron mobility transistor

KW - Kink effect

KW - Large signal model

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U2 - 10.15918/j.tbit1001-0645.2019.119

DO - 10.15918/j.tbit1001-0645.2019.119

M3 - 文章

AN - SCOPUS:85097547223

SN - 1001-0645

VL - 40

SP - 1253

EP - 1258

JO - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

JF - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

IS - 11

ER -

包含Kink效应的改进型GaN HEMTs模型

Abstract

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