Zhang, Q., Hou, Y., Zhang, T., Xu, Z., Huang, Z., Yuan, P., Jia, L., Yang, H., Huang, Y., Ji, W., Qiao, J., Wu, X., & Wang, Y. (2021). Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures. ACS Nano, 15(10), 16589-16596. https://doi.org/10.1021/acsnano.1c06332
Zhang, Quanzhen ; Hou, Yanhui ; Zhang, Teng et al. / Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures. In: ACS Nano. 2021 ; Vol. 15, No. 10. pp. 16589-16596.
@article{bcf9c7393972411bad469ceeee49f5a5,
title = "Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures",
abstract = "Microscopically visualizing the evolution of electronic structures at the interface between two electron-correlated domains shows fundamental importance in both material science and physics. Here, we report scanning tunneling microscopy and spectroscopy studies of the interfacial electronic structures evolution in a phase-engineered monolayer NbSe2 heterostructure. The H-NbSe2 metallic state penetrates the Mott insulating T-NbSe2 at the H/T phase interface, with a prominent 2D charge density wave (CDW) proximity effect. Moreover, an insulating Mott gap collapse with the disappearance of the upper Hubbard band is detected at the electronic phase transition region. Theoretical calculations reveal that such insulating Mott gap collapse can be attributed to the electron doping effect induced by the interface. Our findings promote a microscopical understanding of the interactions between different electron-correlated systems and provide an effective method for controlling the Mott insulating states with phase engineering.",
keywords = "Mott insulator, charge density wave, phase engineering, scanning tunneling microscopy, transition metal dichalcogenides",
author = "Quanzhen Zhang and Yanhui Hou and Teng Zhang and Ziqiang Xu and Zeping Huang and Peiwen Yuan and Liangguang Jia and Huixia Yang and Yuan Huang and Wei Ji and Jingsi Qiao and Xu Wu and Yeliang Wang",
note = "Publisher Copyright: {\textcopyright} 2021 American Chemical Society.",
year = "2021",
month = oct,
day = "4",
doi = "10.1021/acsnano.1c06332",
language = "English",
volume = "15",
pages = "16589--16596",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "10",
}
Zhang, Q, Hou, Y, Zhang, T, Xu, Z, Huang, Z, Yuan, P, Jia, L, Yang, H, Huang, Y, Ji, W, Qiao, J, Wu, X & Wang, Y 2021, 'Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures', ACS Nano, vol. 15, no. 10, pp. 16589-16596. https://doi.org/10.1021/acsnano.1c06332
Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures. /
Zhang, Quanzhen; Hou, Yanhui
; Zhang, Teng et al.
In:
ACS Nano, Vol. 15, No. 10, 04.10.2021, p. 16589-16596.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures
AU - Zhang, Quanzhen
AU - Hou, Yanhui
AU - Zhang, Teng
AU - Xu, Ziqiang
AU - Huang, Zeping
AU - Yuan, Peiwen
AU - Jia, Liangguang
AU - Yang, Huixia
AU - Huang, Yuan
AU - Ji, Wei
AU - Qiao, Jingsi
AU - Wu, Xu
AU - Wang, Yeliang
N1 - Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/10/4
Y1 - 2021/10/4
N2 - Microscopically visualizing the evolution of electronic structures at the interface between two electron-correlated domains shows fundamental importance in both material science and physics. Here, we report scanning tunneling microscopy and spectroscopy studies of the interfacial electronic structures evolution in a phase-engineered monolayer NbSe2 heterostructure. The H-NbSe2 metallic state penetrates the Mott insulating T-NbSe2 at the H/T phase interface, with a prominent 2D charge density wave (CDW) proximity effect. Moreover, an insulating Mott gap collapse with the disappearance of the upper Hubbard band is detected at the electronic phase transition region. Theoretical calculations reveal that such insulating Mott gap collapse can be attributed to the electron doping effect induced by the interface. Our findings promote a microscopical understanding of the interactions between different electron-correlated systems and provide an effective method for controlling the Mott insulating states with phase engineering.
AB - Microscopically visualizing the evolution of electronic structures at the interface between two electron-correlated domains shows fundamental importance in both material science and physics. Here, we report scanning tunneling microscopy and spectroscopy studies of the interfacial electronic structures evolution in a phase-engineered monolayer NbSe2 heterostructure. The H-NbSe2 metallic state penetrates the Mott insulating T-NbSe2 at the H/T phase interface, with a prominent 2D charge density wave (CDW) proximity effect. Moreover, an insulating Mott gap collapse with the disappearance of the upper Hubbard band is detected at the electronic phase transition region. Theoretical calculations reveal that such insulating Mott gap collapse can be attributed to the electron doping effect induced by the interface. Our findings promote a microscopical understanding of the interactions between different electron-correlated systems and provide an effective method for controlling the Mott insulating states with phase engineering.
KW - Mott insulator
KW - charge density wave
KW - phase engineering
KW - scanning tunneling microscopy
KW - transition metal dichalcogenides
UR - http://www.scopus.com/inward/record.url?scp=85117330979&partnerID=8YFLogxK
U2 - 10.1021/acsnano.1c06332
DO - 10.1021/acsnano.1c06332
M3 - Article
C2 - 34606233
AN - SCOPUS:85117330979
SN - 1936-0851
VL - 15
SP - 16589
EP - 16596
JO - ACS Nano
JF - ACS Nano
IS - 10
ER -
Zhang Q, Hou Y, Zhang T, Xu Z, Huang Z, Yuan P et al. Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures. ACS Nano. 2021 Oct 4;15(10):16589-16596. doi: 10.1021/acsnano.1c06332
