Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors

Jie Meng, Han Chun Wu, Jing Jing Chen, Fang Lin, Ya Qing Bie, Igor V. Shvets, Da Peng Yu, Zhi Min Liao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.

Original languageEnglish
Pages (from-to)2240-2244
Number of pages5
JournalSmall
Volume9
Issue number13
DOIs
Publication statusPublished - 8 Jul 2013
Externally publishedYes

Keywords

  • field-effect transistors
  • graphene
  • hysteresis
  • photoelectrical responses
  • trap states

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