Abstract
Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.
Original language | English |
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Pages (from-to) | 2240-2244 |
Number of pages | 5 |
Journal | Small |
Volume | 9 |
Issue number | 13 |
DOIs | |
Publication status | Published - 8 Jul 2013 |
Externally published | Yes |
Keywords
- field-effect transistors
- graphene
- hysteresis
- photoelectrical responses
- trap states