TY - JOUR
T1 - Ultrasensitive all-solution-processed field-effect transistor based perovskite photodetectors with sol-gel SiO2 as the dielectric layer
AU - He, Bo
AU - Li, Weile
AU - Wang, Qi
AU - Liang, Liang
AU - Wang, Haowei
AU - Xu, Junfeng
AU - Yang, Shengyi
AU - Jiang, Yurong
AU - Tang, Yi
AU - Zou, Bingsuo
N1 - Publisher Copyright:
© 2017
PY - 2017
Y1 - 2017
N2 - In this work, we present a high-performance field-effect transistor (FET) based perovskite photodetector by using a sol-gel SiO2 layer as the dielectric layer. The FET-based perovskite photodetector Al(Gate)/SiO2/CH3NH3PbI3/Au(Drain, Source) shows a high responsivity of 10.72 A/W and a high specific detectivity of 6.2 × 1013 Jones under 0.37 μW/cm2 532 nm laser, and the underlain mechanism is discussed. Therefore, this kind of all solution-processed method provides a promising way to fabricate high-performance perovskite-based optoelectronic devices on flexible substrates.
AB - In this work, we present a high-performance field-effect transistor (FET) based perovskite photodetector by using a sol-gel SiO2 layer as the dielectric layer. The FET-based perovskite photodetector Al(Gate)/SiO2/CH3NH3PbI3/Au(Drain, Source) shows a high responsivity of 10.72 A/W and a high specific detectivity of 6.2 × 1013 Jones under 0.37 μW/cm2 532 nm laser, and the underlain mechanism is discussed. Therefore, this kind of all solution-processed method provides a promising way to fabricate high-performance perovskite-based optoelectronic devices on flexible substrates.
KW - All-solution-processed
KW - Field-effect transistor
KW - Perovskite photodetector
KW - Sol-gel SiO layer
KW - Specific detectivity
UR - http://www.scopus.com/inward/record.url?scp=85019137208&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2017.05.082
DO - 10.1016/j.jallcom.2017.05.082
M3 - Article
AN - SCOPUS:85019137208
SN - 0925-8388
VL - 717
SP - 150
EP - 155
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -