Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates

Cai Zhen Li, Jin Guang Li, Li Xian Wang, Liang Zhang, Jing Min Zhang, Dapeng Yu, Zhi Min Liao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)

Abstract

Cd3As2 is a model material of Dirac semimetal with a linear dispersion relation along all three directions in the momentum space. The unique band structure of Cd3As2 is made with both Dirac and topological properties. It can be driven into a Weyl semimetal by symmetry breaking or a topological insulator by enhancing the spin-orbit coupling. Here we report the temperature and gate voltage-dependent magnetotransport properties of Cd3As2 nanoplates with Fermi level near the Dirac point. The Hall anomaly demonstrates the two-carrier transport accompanied by a transition from n-type to p-type conduction with decreasing temperature. The carrier-type transition is explained by considering the temperature-dependent spin-orbit coupling. The magnetoresistance exhibits a large nonsaturating value up to 2000% at high temperatures, which is ascribed to the electron-hole compensation in the system. Our results are valuable for understanding the experimental observations related to the two-carrier transport in Dirac/Weyl semimetals, such as Na3Bi, ZrTe5, TaAs, NbAs, and HfTe5.

Original languageEnglish
Pages (from-to)6020-6028
Number of pages9
JournalACS Nano
Volume10
Issue number6
DOIs
Publication statusPublished - 28 Jun 2016
Externally publishedYes

Keywords

  • Dirac semimetal
  • Hall resistance
  • magnetoresistance
  • temperature dependence
  • two-band transport

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