Tunable transport characteristics of double-gated graphene field-effect transistors using P(VDF-TrFE) ferroelectric gating

Yi Lin Sun; Dan Xie; Jian Long Xu; Xin Ming Li; Cheng Zhang; Rui Xuan Dai; Xian Li; Xiang Jian Meng; Hong Wei Zhu

doi:10.1016/j.carbon.2015.10.006

Tunable transport characteristics of double-gated graphene field-effect transistors using P(VDF-TrFE) ferroelectric gating

Yi Lin Sun, Dan Xie^*, Jian Long Xu, Xin Ming Li, Cheng Zhang, Rui Xuan Dai, Xian Li, Xiang Jian Meng, Hong Wei Zhu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Double-gated graphene field effect transistors (GFETs) have been fabricated using the graphene grown by CVD method as channel conductor and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulator. An interesting method for efficiently modulating the charge transport characteristics of graphene films by introducing double-gated graphene field-effect transistor structure and organic ferroelectric P(VDF-TrFE) as top gate dielectrics has been reported. The introduction of functional P(VDF-TrFE) gate dielectric is to modulate the charge transport characteristics of graphene by polarization doping effects, which provides us an alternative method to rule out the environmental effects on graphene and obtain the GFETs with improved performances. Moreover, bottom gating induced electrostatic doping effects are also found to be an effective way to highly control the top gated transfer characteristics of GFETs.

Original language	English
Pages (from-to)	695-700
Number of pages	6
Journal	Carbon
Volume	96
DOIs	https://doi.org/10.1016/j.carbon.2015.10.006
Publication status	Published - Jan 2016
Externally published	Yes

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title = "Tunable transport characteristics of double-gated graphene field-effect transistors using P(VDF-TrFE) ferroelectric gating",

abstract = "Double-gated graphene field effect transistors (GFETs) have been fabricated using the graphene grown by CVD method as channel conductor and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulator. An interesting method for efficiently modulating the charge transport characteristics of graphene films by introducing double-gated graphene field-effect transistor structure and organic ferroelectric P(VDF-TrFE) as top gate dielectrics has been reported. The introduction of functional P(VDF-TrFE) gate dielectric is to modulate the charge transport characteristics of graphene by polarization doping effects, which provides us an alternative method to rule out the environmental effects on graphene and obtain the GFETs with improved performances. Moreover, bottom gating induced electrostatic doping effects are also found to be an effective way to highly control the top gated transfer characteristics of GFETs.",

author = "Sun, {Yi Lin} and Dan Xie and Xu, {Jian Long} and Li, {Xin Ming} and Cheng Zhang and Dai, {Rui Xuan} and Xian Li and Meng, {Xiang Jian} and Zhu, {Hong Wei}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

year = "2016",

month = jan,

doi = "10.1016/j.carbon.2015.10.006",

language = "English",

volume = "96",

pages = "695--700",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Ltd.",

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T1 - Tunable transport characteristics of double-gated graphene field-effect transistors using P(VDF-TrFE) ferroelectric gating

AU - Sun, Yi Lin

AU - Xie, Dan

AU - Xu, Jian Long

AU - Li, Xin Ming

AU - Zhang, Cheng

AU - Dai, Rui Xuan

AU - Li, Xian

AU - Meng, Xiang Jian

AU - Zhu, Hong Wei

PY - 2016/1

Y1 - 2016/1

N2 - Double-gated graphene field effect transistors (GFETs) have been fabricated using the graphene grown by CVD method as channel conductor and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulator. An interesting method for efficiently modulating the charge transport characteristics of graphene films by introducing double-gated graphene field-effect transistor structure and organic ferroelectric P(VDF-TrFE) as top gate dielectrics has been reported. The introduction of functional P(VDF-TrFE) gate dielectric is to modulate the charge transport characteristics of graphene by polarization doping effects, which provides us an alternative method to rule out the environmental effects on graphene and obtain the GFETs with improved performances. Moreover, bottom gating induced electrostatic doping effects are also found to be an effective way to highly control the top gated transfer characteristics of GFETs.

AB - Double-gated graphene field effect transistors (GFETs) have been fabricated using the graphene grown by CVD method as channel conductor and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulator. An interesting method for efficiently modulating the charge transport characteristics of graphene films by introducing double-gated graphene field-effect transistor structure and organic ferroelectric P(VDF-TrFE) as top gate dielectrics has been reported. The introduction of functional P(VDF-TrFE) gate dielectric is to modulate the charge transport characteristics of graphene by polarization doping effects, which provides us an alternative method to rule out the environmental effects on graphene and obtain the GFETs with improved performances. Moreover, bottom gating induced electrostatic doping effects are also found to be an effective way to highly control the top gated transfer characteristics of GFETs.

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U2 - 10.1016/j.carbon.2015.10.006

DO - 10.1016/j.carbon.2015.10.006

M3 - Article

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SN - 0008-6223

VL - 96

SP - 695

EP - 700

JO - Carbon

JF - Carbon

ER -

Tunable transport characteristics of double-gated graphene field-effect transistors using P(VDF-TrFE) ferroelectric gating

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