@inproceedings{d1bfbb1a0c664a6f98a71420b2856fdc,
title = "Tunable hysteresis behaviors in perovskite transistors",
abstract = "We reported the perovskite based field effect transistors (CH3NH3PbI3-FETs) using HfO2 as the bottom gating dielectrics. A typical hysteresis behavior has been observed in the transfer characteristics of CH3NH3PbI3-FETs with a large hysteresis window. The modulation of gate voltage on the hysteresis behaviors has been demonstrated by applying different gate voltage sweeping ranges. The shift of hysteresis window in the transfer characteristics of CH3NH3PbI3 based transistor has been also investigated under the illumination, which may contribute to a fast photoresponse.",
author = "Yilin Sun and Dan Xie and Mengxing Sun and Changjiu Teng and Ruixuan Dai and Pu Yang and Zhixin Li",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 ; Conference date: 25-10-2016 Through 28-10-2016",
year = "2016",
doi = "10.1109/ICSICT.2016.7998870",
language = "English",
series = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "171--173",
editor = "Yu-Long Jiang and Ting-Ao Tang and Ru Huang",
booktitle = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
address = "United States",
}