Tunable electroluminescence in planar graphene/sio2 memristors

Congli He; Jiafang Li; Xing Wu; Peng Chen; Jing Zhao; Kuibo Yin; Meng Cheng; Wei Yang; Guibai Xie; Duoming Wang; Donghua Liu; Rong Yang; Dongxia Shi; Zhiyuan Li; Litao Sun; Guangyu Zhang

doi:10.1002/adma.201302447

Tunable electroluminescence in planar graphene/sio₂ memristors

Congli He, Jiafang Li, Xing Wu, Peng Chen, Jing Zhao, Kuibo Yin, Meng Cheng, Wei Yang, Guibai Xie, Duoming Wang, Donghua Liu, Rong Yang, Dongxia Shi, Zhiyuan Li, Litao Sun, Guangyu Zhang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

72 Citations (Scopus)

Abstract

Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO₂ memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.

Original language	English
Pages (from-to)	5593-5598
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	39
DOIs	https://doi.org/10.1002/adma.201302447
Publication status	Published - 18 Oct 2013
Externally published	Yes

Keywords

Si nanocrystals
electroluminescence
graphene/SiO nanogap devices
memristor

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10.1002/adma.201302447

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title = "Tunable electroluminescence in planar graphene/sio2 memristors",

abstract = "Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.",

keywords = "Si nanocrystals, electroluminescence, graphene/SiO nanogap devices, memristor",

author = "Congli He and Jiafang Li and Xing Wu and Peng Chen and Jing Zhao and Kuibo Yin and Meng Cheng and Wei Yang and Guibai Xie and Duoming Wang and Donghua Liu and Rong Yang and Dongxia Shi and Zhiyuan Li and Litao Sun and Guangyu Zhang",

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TY - JOUR

T1 - Tunable electroluminescence in planar graphene/sio2 memristors

AU - He, Congli

AU - Li, Jiafang

AU - Wu, Xing

AU - Chen, Peng

AU - Zhao, Jing

AU - Yin, Kuibo

AU - Cheng, Meng

AU - Yang, Wei

AU - Xie, Guibai

AU - Wang, Duoming

AU - Liu, Donghua

AU - Yang, Rong

AU - Shi, Dongxia

AU - Li, Zhiyuan

AU - Sun, Litao

AU - Zhang, Guangyu

PY - 2013/10/18

Y1 - 2013/10/18

N2 - Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.

AB - Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.

KW - Si nanocrystals

KW - electroluminescence

KW - graphene/SiO nanogap devices

KW - memristor

UR - http://www.scopus.com/inward/record.url?scp=84886241502&partnerID=8YFLogxK

U2 - 10.1002/adma.201302447

DO - 10.1002/adma.201302447

M3 - Article

AN - SCOPUS:84886241502

SN - 0935-9648

VL - 25

SP - 5593

EP - 5598

JO - Advanced Materials

JF - Advanced Materials

IS - 39

ER -

Tunable electroluminescence in planar graphene/sio₂ memristors

Abstract

Keywords

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