He, C., Li, J., Wu, X., Chen, P., Zhao, J., Yin, K., Cheng, M., Yang, W., Xie, G., Wang, D., Liu, D., Yang, R., Shi, D., Li, Z., Sun, L., & Zhang, G. (2013). Tunable electroluminescence in planar graphene/sio2 memristors. Advanced Materials, 25(39), 5593-5598. https://doi.org/10.1002/adma.201302447
He, Congli ; Li, Jiafang ; Wu, Xing et al. / Tunable electroluminescence in planar graphene/sio2 memristors. In: Advanced Materials. 2013 ; Vol. 25, No. 39. pp. 5593-5598.
@article{fa7531a010644945bf6b17e78fdf6265,
title = "Tunable electroluminescence in planar graphene/sio2 memristors",
abstract = "Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.",
keywords = "Si nanocrystals, electroluminescence, graphene/SiO nanogap devices, memristor",
author = "Congli He and Jiafang Li and Xing Wu and Peng Chen and Jing Zhao and Kuibo Yin and Meng Cheng and Wei Yang and Guibai Xie and Duoming Wang and Donghua Liu and Rong Yang and Dongxia Shi and Zhiyuan Li and Litao Sun and Guangyu Zhang",
year = "2013",
month = oct,
day = "18",
doi = "10.1002/adma.201302447",
language = "English",
volume = "25",
pages = "5593--5598",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-Blackwell",
number = "39",
}
He, C, Li, J, Wu, X, Chen, P, Zhao, J, Yin, K, Cheng, M, Yang, W, Xie, G, Wang, D, Liu, D, Yang, R, Shi, D, Li, Z, Sun, L & Zhang, G 2013, 'Tunable electroluminescence in planar graphene/sio2 memristors', Advanced Materials, vol. 25, no. 39, pp. 5593-5598. https://doi.org/10.1002/adma.201302447
Tunable electroluminescence in planar graphene/sio2 memristors. / He, Congli
; Li, Jiafang; Wu, Xing et al.
In:
Advanced Materials, Vol. 25, No. 39, 18.10.2013, p. 5593-5598.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Tunable electroluminescence in planar graphene/sio2 memristors
AU - He, Congli
AU - Li, Jiafang
AU - Wu, Xing
AU - Chen, Peng
AU - Zhao, Jing
AU - Yin, Kuibo
AU - Cheng, Meng
AU - Yang, Wei
AU - Xie, Guibai
AU - Wang, Duoming
AU - Liu, Donghua
AU - Yang, Rong
AU - Shi, Dongxia
AU - Li, Zhiyuan
AU - Sun, Litao
AU - Zhang, Guangyu
PY - 2013/10/18
Y1 - 2013/10/18
N2 - Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.
AB - Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.
KW - Si nanocrystals
KW - electroluminescence
KW - graphene/SiO nanogap devices
KW - memristor
UR - http://www.scopus.com/inward/record.url?scp=84886241502&partnerID=8YFLogxK
U2 - 10.1002/adma.201302447
DO - 10.1002/adma.201302447
M3 - Article
AN - SCOPUS:84886241502
SN - 0935-9648
VL - 25
SP - 5593
EP - 5598
JO - Advanced Materials
JF - Advanced Materials
IS - 39
ER -
He C, Li J, Wu X, Chen P, Zhao J, Yin K et al. Tunable electroluminescence in planar graphene/sio2 memristors. Advanced Materials. 2013 Oct 18;25(39):5593-5598. doi: 10.1002/adma.201302447
